Kryzhanovskaya N. V.1, Makhov I. S.1, Nadtochiy A. M.1,2, Ivanov K. A.1, Moiseev E. I.1, Melnichenko I. A.1, Komarov S. D.1, Mintairov S. A.2, Kalyuzhnyy N. A.2, Maximov M. V.3, Shernyakov Yu. M.2, Zhukov A. E.1
1HSE University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: zhukale@gmail.com
The dependence of the lasing line position on optical loss is investigated for stripe lasers with different numbers of planes of dense InGaAs/GaAs quantum dots (quantum well-dots). An analytical expression is obtained that explicitly establishes the relationship between the peak position of the gain spectrum and the value at the peak gain for an array with a Gaussian density of states. Reasonable agreement between the model predictions and experimental data is demonstrated. The saturated mode gain is estimated as 51 cm-1 per layer. Keywords: quantum dots, semiconductor laser, gain spectrum, inhomogeneous broadening.
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