Bokhan P. A.1, Zhuravlev K. S.1, Zakrevsky D. E.1,2, Malin T. V.1, Fateev N. V.1,3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
Email: bokhan@isp.nsc.ru, zuravlev@isp.nsc.ru, zakrdm@isp.nsc.ru, mal-tv@isp.nsc.ru, fateev@isp.nsc.ru
The optical gain coefficients measured in heavily doped Al0.65Ga0.35N:Si structures under continuous pumping with broadband radiation (190-330 nm) at room temperature. The optical gain of 212 cm-1 was obtained under 3.2 mW/cm2 of the optical pump power density, which well agrees with the data obtained with pulsed excitation. The measured value for the radiative recombination cross-section under continuous optical excitation is σ~ 10-15 cm2. Keywords: heavily doped AlxGa1-xN structures, optical gain, radiative recombination cross-section.
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