On multi layers X-ray mirrors at about 100 eV on doped super lattice in n-Si nearby X-ray characteristic line
Andronov A. A.1, Pozdniakova V. I.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: andron@ipmras.ru, vera@ipmras.ru
Calculation of dielectric permittivity nearby X-ray characteristic line transition in degenerate n-Si is given. Possibility to fabricate multilayer X-ray mirror (MXM) nearby the transition with periodic n-doping with reflection coefficient up to about 50% at 77 K is demonstrated. It is pointed out possibility to produce dynamic masks in such MXMs via Shark effect in powerful optical radiation. Keywords: X-ray emission, multilayer X-ray mirrors, X-ray characteristic line transitions.
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