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Formation of the light extracting surface of IR (850 nm) light-emitting diodes
Russian version
Malevskaya A. V. 1, Kalyuzhnyy N. A. 1, Malevskii D. A. 1, Blokhin A. A. 1, Nakhimovich M. V.1, Il'inskaya N. D. 1
1Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, Nickk@mail.ioffe.ru, dmalevsky.scell@mail.ioffe.ru, Aleksey.Blokhin@mail.ioffe.ru, NMar@mail.ioffe.ru, Nataya.Ilynskaya@mail.ioffe.ru
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Investigation of post-growth technology development of IR (850 nm) light-emitting diodes based on AlGaAs/GaAs heterostructures, grown by metalorganic vapour-phase epitaxy, has been carried out. Various methods of texturing and brightening the light extracting diode surfaces have been investigated, and a technology for forming optical elements has been developed. Analyzed was the relationship between chip formation technology and photovoltaic parameters of light-emitting diodes: electroluminescence intensity, optical power and external quantum efficiency. As a result of the developed technology, a twofold optical power value increase was achieved, which amounted > 400 mW at current 800 mA. Keywords: IR light-emitting diode, texturing, antireflection coating, optical element.
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