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Effect of substrate temperature on the Ga-S films properties prepared by PECVD
Russian version
M.A. Kudryashov1,2, L.A. Mochalov1,2, M.A. Vshivtsev1, I.O. Prokhorov1,2, Yu.M. Spivak3, V.A. Moshnikov3, Yu.P. Kudryashova2, P.V. Mosyagin2, E.A. Slapovskaya2, V.M. Malyshev1
1Alekseev State Technical University, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
3St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: ymkanageeva@yandex.ru
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Gallium sulfide (GaS) has a great potential for applications in optoelectronics and energy storage. In view of the sufficiently large Eg, thin films of gallium sulfide can be used as a buffer layer in a solar cell. GaS also provides efficient passivation of the GaAs surface. In this work, Ga-S thin films were obtained for the first time by plasma-chemical vapor deposition. High-purity elemental Ga and S were used as precursors. The plasma was excited by an RF generator (40.68 MHz) at a reduced pressure of 0.1 Torr. The composition, structural and optical properties of Ga-S films were studied depending on the substrate temperature. All films were highly transparent (75%) in the range of 400-1100 nm. Keywords: gallium sulfide, films, PECVD, structure, optical properties.
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