Volumes and Issues
Home » Technical Physics » Year 2024, issue 4 » Article p. 601
<<<>>>
Impedance spectroscopy study of tandem solar cells based on c-Si with a top layer perovskite nanocrystals CsPbBr3 and CsPbI3
Russian version
Boudjemila L.1,2, Nenashev G. V. 2, Malyshkin V. G. 2, Terukov E.I. 2, Aleshin A.N. 2
1Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: lariessai21@gmail.com, virison95@gmail.com, mal@gromco.com, eug.terukov@mail.ioffe.ru, aleshin@transport.ioffe.ru
PDF
The deposition of an additional layer of nanoparticles is a widely used method for improving optical and electrical characteristics of semiconductor solar cells (SCs). We present the results of studies of impedance spectroscopy (IS) in operating sandwich structures based on films of nanocrystals (NCs) of inorganic perovskites of lead halides CsPbI3 and CsPbBr3 deposited on the surface of a SCs based on crystalline silicon (c-Si). The IS results show that under identical conditions the Cole-Cole plots for both structures are in a good agreement with the equivalent circuit model and represents series resistance, recombination resistance and geometric capacitance, respectively, which arise due to charge accumulation, charge transfer resistance and/or additional interfacial electronic states. It was found that adding of the CsPbI3 layer enhances the photo response under bias, but such a photo response leads to a decrease in conductivity. On the contrary, adding of the CsPbBr3 layer blocks the photo response under bias but slightly improves the photo response for the zero bias. The obtained results provide the way to improve the performance of next generation of tandem c-Si SCs with perovskite NCs upper layers. Keywords: Impedance spectroscopy, Solar cell, Perovskites, Nanocrystals, Crystalline silicon.
  1. G. Eperon, M. Horantner, H. Snaith. Nat. Rev. Chem., 1, 0095 (2017). DOI: 10.1038/s41570-017-0095
  2. C. Gao, D. Du, W. Shen. Carb Neutrality, 1, 9 (2022). DOI: 10.1007/s43979-022-00003-x
  3. A. Al-Ashouri, A. Magomedov, M. Rob, M. Jost, M. Talaikis, G. Chistiakova, R. Schlatmann. Science, 366 (6468), 857 (2019). DOI: 10.1126/science.abd4016
  4. F. Sahli, J. Werner, B.A. Kamino, M. Brauninger, R. Monnard, B. Paviet-Salomon. Nature Mater., 17 (9), 820 (2018). DOI: 10.1038/s41563-018-0115-4
  5. L. Boudjemila, A.N. Aleshin, V.G. Malyshkin, P.A. Aleshin, I.P. Shcherbakov, V.N. Petrov, E.I. Terukov. Physics Solid State, 64, 1670 (2022). DOI:10.21883/PSS.2022.11.54189.418
  6. E. Hauff, D. Klotz. J. Mater. Chem. C, 10, 742 (2022). DOI: 10.1039/D1TC04727B
  7. M.M. Shehata, T.N. Truong, R. Basnet, H.T. Nguyen, D.H. Macdonald, L.E. Black. Solar Energy Materials Solar Cells, 251, 112167 (2023). DOI: 10.1016/j.solmat.2022.112167
  8. B. Hailegnaw, N.S. Sariciftci, M.C. Scharber. Phys. Status Solidi A, 22, 2000291 (2020). DOI: 10.1002/pssa.202000291
  9. E. Terukov, A. Kosarev, A. Abramov, E. Malchukova. Solar Panels and Photovoltaic Materials, 5 (2018). DOI: 10.5772/intechopen.75013
  10. M. Masuko, M. Shigematsu, T. Hasiguchi, D. Fujishima, M. Kai, N. Yoshimira, T. Yamaguchi, Y. Ichihashi, T. Mishima, N. Matsubara, T. Yamanishi, T. Takahama, M. Taguchi, E. Maruyama, S. Okamoto. IEEE J. Photovoltaics, 4, 1433 (2014). DOI: 10.1109/JPHOTOV.2014.2352151
  11. A.N. Aleshin, I.P. Shcherbakov, E.V. Gushchina, L.B. Matyushkin, V.A. Moshnikov. Organic Electron., 50, 213 (2017). DOI: 10.1016/j.orgel.2017.08.004
  12. A.N. Aleshin, I.P. Shcherbakov, O.P. Chikalova-Luzina, L.B. Matyushkin, M.K. Ovezov, A.M. Ershova, I.N. Trapeznikova, V.N. Petrov. Synthetic Metals, 260, 116291 (2020). DOI: 10.1016/j.synthmet.2020.116291
  13. L. Protesescu, S. Yakunin, M.I. Bodnarchuk, F. Krieg, R. Caputo, C.H. Hendon, M.V. Kovalenko. Nano Lett., 15, 3692 (2015). DOI: 10.1021/nl5048779
  14. A.K. Soni, R. Joshi, R.S. Ningthoujam. Hot Injection Method for Nanoparticle Synthesis: Basic Concepts, Examples and Applications. In: A.K. Tyagi, R.S. Ningthoujam (eds). Handbook on Synthesis Strategies for Advanced Materials (Indian Institute of Metals Series. Springer, Singapore, 2021), DOI: 10.1007/978-981-16-1807-9_13
  15. A.M. Ivanov, G.V. Nenashev, A.N. Aleshin. J. Mater. Sci.: Mater. Electron., 33, 21666 (2022). DOI: 10.1007/s10854-022-08955-7
  16. H. Zhang, X. Qiao, Y. Shen, T. Moehl, S.M. Zakeeruddin, M. Gratzel, M. Wang. J. Mater. Chem. A, 3, 11762 (2015). DOI: 10.1039/C5TA02206A
  17. J. Panigrahi, R. Singh, N. Batra, J. Gope, M. Sharma, P. Pathi, S. Srivastava, C. Rauthan, P. Singh. Sol. Energy, 136, 412 (2016). DOI: 10.1016/j.solener.2016.06.041
  18. Y. Yorozu, M. Hirano, K. Oka, Y. Tagawa. IEEE Transl. J. Magn. Jpn., 2, 740 (1987)
  19. J. Li, R. Gao, F. Gao, J. Lei, H. Wang, X. Wu, J. Li, H. Liu, X. Hua, S. Liu. J. Alloys Comp., 818, 152903 (2020). DOI: 10.1016/j.jallcom.2019.152903
  20. G. Tong, T. Chen, H. Li, W. Song, Y. Chang, J. Liu, L. Yu, J. Xu, Y. Qi, Y. Jiang. Solar RRL, 3, 1900030 (2019). DOI: 10.1002/solr.201900030
  21. V. Srivastava, A. Alexander, B. Anitha, M.A.G. Namboothiry. Sol. Energy Mat. Sol. Cells, 237, 111548 (2022). DOI: 10.1016/j.solmat.2021.111548
  22. N.K. Tailor, C.A. Aranda, M. Saliba, S. Satapathi. ACS Mater. Lett., 4, 2298 (2022). DOI: 10.1021/acsmaterialslett.1c00242
  23. H. Jin, Y. Chen, L. Zhang, R. Wan, Z. Zou, H. Li, Y. Gao. Nanotechnology, 32, 085202 (2020). DOI: 10.1088/1361-6528/abc850
  24. Q. He, G. Chen, Y. Wang, X. Liu, D. Xu, X. Xu, Y. Liu, J. Bao, X. Wang. Small, 17, 2101403 (2021). DOI: 10.1002/smll.202101403
  25. M.M. Shehata, T.G. Abdel-Malik, K. Abdelhady. J. Alloys Comp., 736, 225 (2018). DOI: 10.1016/j.jallcom.2017.11.097

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru