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Stability of low-k organosilicate dielectrics with benzene bridges to vacuum ultraviolet plasma radiation during Ta barrier layer deposition
Pal A. F.
1, Ryabinkin A. N.
1, Serov A. O.
1, Rakhimova T. V.
1, Vishnevskiy A. S.
2, Seregin D. S.
2, Vorotilov K. A.
2, Baklanov M.R.
2
1Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
2MIREA - Russian Technological University, Moscow, Russia
2MIREA - Russian Technological University, Moscow, Russia
Email: apal@mics.msu.su, alex.ryabinkin@gmail.com, aloleserov@yandex.ru, TRakhimova@mics.msu.su, vishnevskiy@mirea.ru, d_seregin@mirea.ru, vorotilov@mirea.ru, baklanovmr@gmail.com
The stability of low-k periodic mesoporous organosilicate low-k dielectrics with benzene bridges to VUV plasma radiation during the deposition of tantalum barrier layers by magnetron sputtering with additional ionization by inductively coupled plasma has been studied. The correlation of composition and porous structural features of the samples with their hydrophobicity and resistance to VUV was found. Keywords: low low-k dielectrics, VUV, barrier layers, PVD.
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