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Resistance change of thin films Bi2Se3 and heterostructures Bi2Se3 on graphene under tensile deformation
Russian version
N A. Nebogatikova 1, I.V. Antonova 1,2, R.A. Soots 1, K.A. Koch 3, E.S. Klimova3, V.A. Volodin 1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Institute of Geology and Mineralogy named after. S.L. Sobolev SB RAS, Novosibirsk, Russia
Email: nadonebo@gmail.com, nadonebo@isp.nsc.ru
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The creation of vertical Bi2Se3 heterostructures based on graphene, obtained by physical vapor deposition, leads not only to a more advanced structure and conductivity of the Bi2Se3 layer, but also to improved mechanical properties. Films Bi2Se3 with a thickness of 20-40 nm based on CVD graphene slightly changed their resistance under tensile deformations created during bending of the structures. It was found that the resistance increases by only 20-30% when stretched to 3.3%. When Bi2Se3 is grown on a layer of printed graphene, a film Bi2Se3 is formed that is inhomogeneous in area and thickness, cracking at strains greater than 1.5%. Keywords: vertical heterostructures, Bi2Se3 on graphene, tensile deformations, change in resistance.
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