Technical Physics Letters
To authors
Volumes and Issues
- 2024
- 2023
- 2022
The influence of chemical pretreatment on the passivation efficiency of textured silicon wafers
Pozdeev V. A.1,2, Uvarov A. V.
1, Gudovskikh A. S.
1,2, Vyacheslavova E. A.1
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: pozdeev99va@gmail.com, lumenlight@mail.ru, gudovskikh@spbau.ru, cate.viacheslavova@yandex.ru
The influence of the chemical surface pretreatment by the RCA (Radio Corporation of America) and modified Shiraki methods prior to passivating with a layer of amorphous hydrogenated silicon on the effective charge-carrier lifetime was investigated. The effect was studied on silicon wafers textured by various etching methods, including inductively coupled plasma reactive ion etching and wet etching. The preference of the modified Shiraki method was demonstrated. The maximum achieved value of the effective carrier lifetime for wafers textured by reactive ion etching with inductively coupled plasma was 400 μs, while that for wafers textured by the combined wet/RIE method was 500 μs. Keywords: photovoltaic converters, silicon, amorphous silicon, black silicon, passivation, reactive ion etching.
- M. Otto, M. Algasinger, H. Branz, B. Gesemann, T. Gimpel, K. Fuchsel, T. Kasebier, S. Kontermann, S. Koynov, X. Li, V. Naumann, J. Oh, A.N. Sprafke, J. Ziegler, M. Zilk, R.B. Wehrspohn, Adv. Opt. Mater., 3 (2), 147 (2014). DOI: 10.1002/adom.201400395
- M. Kroll, T. Kasebier, M. Otto, R. Salzer, R.B. Wehrspohn, E.-B. Kley, A. Tunnermann, T. Pertsch, Proc. SPIE, 7725, 772505 (2010). DOI: 10.1117/12.854596
- M. Kroll, M. Otto, T. Kasebier, K. Fuchsel, R.B. Wehrspohn, E.-B. Kley, A. Tunnermann, T. Pertsch, Proc. SPIE, 8438, 843817 (2012). DOI: 10.1117/12.922380
- A. Richter, S.W. Glunz, F. Werner, J. Schmidt, A. Cuevas, Phys. Rev. B, 86 (16), 165202 (2012). DOI: 10.1103/physrevb.86.165202
- J. Wang, X. Ru, T. Ruan, Y. Hu, Y. Zhang, H. Yan, J. Mater. Sci.: Mater. Electron., 32 (20), 25327 (2021). DOI: 10.1007/s10854-021-06991-3
- E.A. Vyacheslavova, I.A. Morozov, D.A. Kudryashov, A.V. Uvarov, A.I. Baranov, A.A. Maksimova, S.N. Abolmasov, A.S. Gudovskikh, ACS Omega, 7 (7), 6053 (2022). DOI: 10.1021/acsomega.1c06435
- W. Kern, D.A. Puotinen, RCA Rev., 31, 187 (1970)
- A. Ishizaka, Y. Shiraki, Electrochem. Soc., 133 (4), 666 (1986). DOI: 10.1149/1.2108651
- D. Pysch, C. Meinhardt, K.-U. Ritzau, M. Bivour, K. Zimmermann, C. Schetter, M. Hermle, S.W. Glunz, in 2010 35th IEEE Photovoltaic Specialists Conf. (IEEE, 2010), p. 003570. DOI: 10.1109/pvsc.2010.5614351
- H. Angermann, A. Laades, U. Sturzebecher, E. Conrad, C. Klimm, T.F. Schulze, K. Jacob, A. Lawerenz, L. Korte, Solid State Phenom., 187, 349 (2012). DOI: 10.4028/www.scientific.net/SSP.187.349
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.