Technical Physics Letters
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Surface photovoltage in heavily doped p+-GaAs with adsorbed cesium and oxygen overlayers
Khoroshilov V. S.
1,2, Kazantsev D. M.
1,2, Rozhkov S. A.
1,2, Alperovich V. L.
1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: khoros@isp.nsc.ru, dmkazantsev@isp.nsc.ru, rozhkovs@isp.nsc.ru, alper_v@mail.ru
A new method for measuring the surface photovoltage based on the dependence of photoemission quantum yield on the band bending has been developed. Using this technique, the evolution of photovoltage in heavily doped p+-GaAs (6·1018 cm-3) under cesium and oxygen adsorption is studied. Reversible changes in photovoltage, which differ qualitatively from those observed earlier on lightly doped p-GaAs, are presented. The observed behavior is explained by the variations in surface recombination velocity during the formation and decay of two-dimensional cesium clusters. Keywords: photoemission, surface photovoltage, GaAs, photoluminescence, negative electron affinity.
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