Surface treatment of gallium arsenide after etching in C2F5Cl-plasma
Okhapkin A. I. 1, Kraev S. A.1, Daniltsev V. M.1, Drozdov M. N.1, Korolyov S. A.1, Zorina M. V.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: poa89@ipmras.ru, kraev@ipmras.ru, danil@ipmras.ru, drm@ipm.sci-nnov.ru, PESH@ipm.sci-nnov.ru, mzor@ipmras.ru

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In the work four different methods for surface treatment of gallium arsenide after etching in chloropentafluoroethane (C2F5Cl) plasma were presented; the stoichiometry of the upper layer, roughness, and the presence of impurities were studied. The most optimal of the methods is a combination of ex situ etching in hydrogen plasma followed by removal of the upper layer by liquid etching in NH4OH/H2O2/H2O. By this method, it is possible to remove almost all contaminants, both from the surface and from the side walls of the profile with an acceptable level of roughness. Keywords: chloropentafluoroethane, plasma-chemical etching, gallium arsenide, surface.
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