Technical Physics Letters
Volumes and Issues
Home » Technical Physics Letters » Year 2023, issue 8 » Article p. 64
<<<>>>
Low-voltage InP heterostyristors for 50-150 ns current pulses generation
Russian version
DOI: 10.61011/TPL.2023.08.56692.19602
Slipchenko S. O. 1, Podoskin A. A. 1, Gavrina P. S.1, Kirichenko I. K.1, Shuvalova N. V.1, Rudova N. A.1, Kapitonov V. A.1, Leshko A. Yu.1, Shushkanov I. V.1, Zolotarev V. V.1, Krychkov V. A.1, Pikhtin N. A.1, Bagaev T. A.1, Yarotskaya I. V.1, Svetogorov V. N.2, Ryaboshtan Yu. L.2, Ladugin M. A.2, Marmalyuk A. A.2, Simakov V. A.2
1Ioffe Institute, St. Petersburg, Russia
2“Polyus” Research Institute of M.F. Stelmakh Joint Stock Company, Moscow, Russia
Email: SergHPL@mail.ioffe.ru, podoskin@mail.ioffe.ru
PDF
Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53-154 ns and amplitudes of 38-130 A was demonstrated when the capacitor values were changed in the range of 56-1000 nF. Keywords: Thyristor, heterothyristor, current switch. DOI: 10.61011/TPL.2023.08.56692.19602
  1. T.A. Bagaev, N.V. Gul'tikov, M.A. Ladugin, A.A. Marmalyuk, Y.V. Kurnyavko, V.V. Krichevskii, A.A. Morozyuk, V.P. Konyaev, V.A. Simakov, S.O. Slipchenko, A.A. Podoskin, N.A. Pikhtin, A.E. Kazakova, D.N. Romanovich, V.A. Kryuchkov, Quantum Electron., 51 (10), 912 (2021). DOI: 10.1070/QEL17634
  2. A. Klehr, A. Liero, H. Christopher, H. Wenzel, A. Maab dorf, P. Della Casa, J. Fricke, A. Ginolas, A. Knigge, Semicond. Sci. Technol., 35 (6), 065016 (2020). DOI: 10.1088/1361-6641/ab8397
  3. S. Aboujja, D. Chu, D. Bean, SPIE, 11983, 119830P (2022). DOI: 10.1117/12.2608223
  4. S.O. Slipchenko, A.A. Podoskin, O.S. Soboleva, D.A. Veselov, V.V. Zolotarev, N.A. Pikhtin, T.A. Bagaev, M.A. Ladugin, A.A. Marmalyuk, V.A. Simakov, I.S. Tarasov, IEEE Trans. Electron Dev., 63 (8), 3154 (2016). DOI: 10.1109/TED.2016.2582700
  5. L.J. Mawst, H. Kim, G. Smith, W. Sun, N. Tansu, Prog. Quant. Electron., 75, 100303 (2021). DOI: 10.1016/j.pquantelec.2020.100303
  6. F. Bugge, U. Zeimer, S. Gramlich, I. Rechenberg, J. Sebastian, G. Erbert, M. Weyers, J. Cryst. Growth, 221 (1-4), 496 (2000). DOI: 10.1016/S0022-0248(00)00751-X
  7. D.G. Kim, J.J. Lee, Y.W. Choi, S. Lee, B.K. Kang, S.H. Kim, N. Futakuchi, Y. Nakano, IEEE Photon. Technol. Lett., 12 (9), 1219 (2000). DOI: 10.1109/68.874241
  8. V.N. Svetogorov, Yu.L. Ryaboshtan, N.A. Volkov, M.A. Ladugin, A.A. Padalitsa, A.A. Marmalyuk, K.V. Bakhvalov, D.A. Veselov, A.V. Lyutetskii, V.A. Strelets, S.O. Slipchenko, N.A. Pikhtin, Quantum Electron., 51 (10), 909 (2021). DOI: 10.1070/QEL17635
  9. N.A. Volkov, V.N. Svetogorov, Yu.L. Ryaboshtan, A.Yu. Andreev, I.V. Yarotskaya, M.A. Ladugin, A.A. Padalitsa, A.A. Marmalyuk, S.O. Slipchenko, A.V. Lyutetskii, D.A. Veselov, N.A. Pikhtin, Quantum Electron., 51 (4), 283 (2021). DOI: 10.1070/QEL17540
  10. S.O. Slipchenko, A.A. Podoskin, V.V. Vasil'eva, N.A. Pikhtin, A.V. Rozhkov, A.V. Gorbatyuk, V.V. Zolotarev, D.A. Veselov, A.V. Jabotinskii, A.A. Petukhov, I.S. Tarasov, T.A. Bagaev, M.V. Zverkov, V.P. Konyaev, Yu.V. Kurniavko, M.A. Ladugin, A.V. Lobintsov, A.A. Marmalyuk, A.A. Padalitsa, V.A. Simakov, Semiconductors, 48 (5), 697 (2014). DOI: 10.1134/S1063782614050224
  11. N.A. Volkov, A.Yu. Andreev, I.V. Yarotskaya, Yu.L. Ryaboshtan, V.N. Svetogorov, M.A. Ladugin, A.A. Padalitsa, A.A. Marmalyuk, S.O. Slipchenko, A.V. Lyutetskii, D.A. Veselov, N.A. Pikhtin, Quant. Electronics, 51 (2), 133 (2021). DOI: 10.1070/QEL17480
  12. Yu.K. Bobretsova, D.A. Veselov, N.V. Voronkova, S.O. Slipchenko, V.A. Strelets, M.V. Bogdanovich, P.V. Shpak, M.A. Ladugin, A.A. Marmalyuk, N.A. Pikhtin, Quantum Electron., 49 (5), 488 (2019). DOI: 10.1070/QEL16956

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru