Low-voltage InP heterostyristors for 50-150 ns current pulses generation
Slipchenko S. O. 1, Podoskin A. A. 1, Gavrina P. S.1, Kirichenko I. K.1, Shuvalova N. V.1, Rudova N. A.1, Kapitonov V. A.1, Leshko A. Yu.1, Shushkanov I. V.1, Zolotarev V. V.1, Krychkov V. A.1, Pikhtin N. A.1, Bagaev T. A.1, Yarotskaya I. V.1, Svetogorov V. N.2, Ryaboshtan Yu. L.2, Ladugin M. A.2, Marmalyuk A. A.2, Simakov V. A.2
1Ioffe Institute, St. Petersburg, Russia
2“Polyus” Research Institute of M.F. Stelmakh Joint Stock Company, Moscow, Russia
Email: SergHPL@mail.ioffe.ru, podoskin@mail.ioffe.ru

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Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53-154 ns and amplitudes of 38-130 A was demonstrated when the capacitor values were changed in the range of 56-1000 nF. Keywords: Thyristor, heterothyristor, current switch. DOI: 10.61011/TPL.2023.08.56692.19602
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