Slipchenko S. O.
1, Podoskin A. A.
1, Gavrina P. S.
1, Kirichenko I. K.
1, Shuvalova N. V.
1, Rudova N. A.
1, Kapitonov V. A.
1, Leshko A. Yu.
1, Shushkanov I. V.
1, Zolotarev V. V.
1, Krychkov V. A.
1, Pikhtin N. A.
1, Bagaev T. A.
1, Yarotskaya I. V.
1, Svetogorov V. N.
2, Ryaboshtan Yu. L.
2, Ladugin M. A.
2, Marmalyuk A. A.
2, Simakov V. A.
21Ioffe Institute, St. Petersburg, Russia
2“Polyus” Research Institute of M.F. Stelmakh Joint Stock Company, Moscow, Russia
Email: SergHPL@mail.ioffe.ru, podoskin@mail.ioffe.ru
Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53-154 ns and amplitudes of 38-130 A was demonstrated when the capacitor values were changed in the range of 56-1000 nF. Keywords: Thyristor, heterothyristor, current switch. DOI: 10.61011/TPL.2023.08.56692.19602
- T.A. Bagaev, N.V. Gul'tikov, M.A. Ladugin, A.A. Marmalyuk, Y.V. Kurnyavko, V.V. Krichevskii, A.A. Morozyuk, V.P. Konyaev, V.A. Simakov, S.O. Slipchenko, A.A. Podoskin, N.A. Pikhtin, A.E. Kazakova, D.N. Romanovich, V.A. Kryuchkov, Quantum Electron., 51 (10), 912 (2021). DOI: 10.1070/QEL17634
- A. Klehr, A. Liero, H. Christopher, H. Wenzel, A. Maab dorf, P. Della Casa, J. Fricke, A. Ginolas, A. Knigge, Semicond. Sci. Technol., 35 (6), 065016 (2020). DOI: 10.1088/1361-6641/ab8397
- S. Aboujja, D. Chu, D. Bean, SPIE, 11983, 119830P (2022). DOI: 10.1117/12.2608223
- S.O. Slipchenko, A.A. Podoskin, O.S. Soboleva, D.A. Veselov, V.V. Zolotarev, N.A. Pikhtin, T.A. Bagaev, M.A. Ladugin, A.A. Marmalyuk, V.A. Simakov, I.S. Tarasov, IEEE Trans. Electron Dev., 63 (8), 3154 (2016). DOI: 10.1109/TED.2016.2582700
- L.J. Mawst, H. Kim, G. Smith, W. Sun, N. Tansu, Prog. Quant. Electron., 75, 100303 (2021). DOI: 10.1016/j.pquantelec.2020.100303
- F. Bugge, U. Zeimer, S. Gramlich, I. Rechenberg, J. Sebastian, G. Erbert, M. Weyers, J. Cryst. Growth, 221 (1-4), 496 (2000). DOI: 10.1016/S0022-0248(00)00751-X
- D.G. Kim, J.J. Lee, Y.W. Choi, S. Lee, B.K. Kang, S.H. Kim, N. Futakuchi, Y. Nakano, IEEE Photon. Technol. Lett., 12 (9), 1219 (2000). DOI: 10.1109/68.874241
- V.N. Svetogorov, Yu.L. Ryaboshtan, N.A. Volkov, M.A. Ladugin, A.A. Padalitsa, A.A. Marmalyuk, K.V. Bakhvalov, D.A. Veselov, A.V. Lyutetskii, V.A. Strelets, S.O. Slipchenko, N.A. Pikhtin, Quantum Electron., 51 (10), 909 (2021). DOI: 10.1070/QEL17635
- N.A. Volkov, V.N. Svetogorov, Yu.L. Ryaboshtan, A.Yu. Andreev, I.V. Yarotskaya, M.A. Ladugin, A.A. Padalitsa, A.A. Marmalyuk, S.O. Slipchenko, A.V. Lyutetskii, D.A. Veselov, N.A. Pikhtin, Quantum Electron., 51 (4), 283 (2021). DOI: 10.1070/QEL17540
- S.O. Slipchenko, A.A. Podoskin, V.V. Vasil'eva, N.A. Pikhtin, A.V. Rozhkov, A.V. Gorbatyuk, V.V. Zolotarev, D.A. Veselov, A.V. Jabotinskii, A.A. Petukhov, I.S. Tarasov, T.A. Bagaev, M.V. Zverkov, V.P. Konyaev, Yu.V. Kurniavko, M.A. Ladugin, A.V. Lobintsov, A.A. Marmalyuk, A.A. Padalitsa, V.A. Simakov, Semiconductors, 48 (5), 697 (2014). DOI: 10.1134/S1063782614050224
- N.A. Volkov, A.Yu. Andreev, I.V. Yarotskaya, Yu.L. Ryaboshtan, V.N. Svetogorov, M.A. Ladugin, A.A. Padalitsa, A.A. Marmalyuk, S.O. Slipchenko, A.V. Lyutetskii, D.A. Veselov, N.A. Pikhtin, Quant. Electronics, 51 (2), 133 (2021). DOI: 10.1070/QEL17480
- Yu.K. Bobretsova, D.A. Veselov, N.V. Voronkova, S.O. Slipchenko, V.A. Strelets, M.V. Bogdanovich, P.V. Shpak, M.A. Ladugin, A.A. Marmalyuk, N.A. Pikhtin, Quantum Electron., 49 (5), 488 (2019). DOI: 10.1070/QEL16956
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.