Thin-film LED based on AlInGaN layers grown on hybrid SiC/Si substrates
Markov L. K. 1, Kukushkin S. A. 2, Pavluchenko A. S. 1, Smirnova I. P. 1, Sakharov A. V. 1, Nikolaev A. E. 1, Grashchenko A. S. 2, Osipov A. V. 2, Tsatsul'nikov A. F. 3
1Ioffe Institute, St. Petersburg, Russia
2Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
3Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia

We present the results of fabrication of flip-chip LEDs with removed substrate from AlInGaN heterostructures grown on SiC/Si substrates synthesized by vacancy-matching atom substitution. It is shown that SiC/Si substrates are optimal from the viewpoint of matching lattice parameters, thermal conductivity, and optical characteristics of the material at a significantly lower cost. Therewith, the procedure of cutting wafers into individual chips and removal of the opaque silicon part of the substrate becomes easier, and the transparent SiC part of the substrate remaining on the chip surface creates a relief that facilitates light output. Keywords: thin-film LEDs, LEDs on silicon, LEDs on silicon carbide on silicon, AlInGaN heterostructures, SiC/Si. DOI: 10.61011/TPL.2023.08.56677.19616
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