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Study of the Effect of Growth Temperature on the Properties of Nitrogen-Doped Carbon Nanotubes for Designing Nanopiezotronic Devices

Russian version

DOI: 10.61011/TP.2023.07.56630.94-23

Il'ina M. V.

¹, Rudyk N. N. ¹, Soboleva O. I. ¹, Polyvianova M. R.¹, Khubezhov S. A. ², Il'in O. I. ¹

¹Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Taganrog, Russia
²Khetagurov North Ossetian State University, Vladikavkaz, Russia

Email: mailina@sfedu.ru, nnrudyk@sfedu.ru

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Abstract
References
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The regularities of the influence of the growth temperature on the geometrical parameters, the concentration of the dopant nitrogen and the type of defects formed in carbon nanotubes grown on a molybdenum sublayer are established in this paper. It is shown that the best piezoelectric and resistive properties are observed in nitrogen-doped carbon nanotubes (N-CNTs) grown at a temperature of 525^oC, which is due to the highest concentration of dopant nitrogen and high aspect ratio of nanotubes. Based on the results of thermodynamic analysis, the dependence of the dopant nitrogen concentration and the defect type on the tendency to form molybdenum nitrides and carbides during the growth of N-CNTs is shown. The obtained results can be used in the development of nanopiezotronic devices based on arrays of vertically aligned N-CNTs: nanogenerators, strain sensors and memory elements. Keywords: carbon nanotubes, PECVD, nanopiezotronics, nitrogen defects, piezoelectric response, X-ray photoelectron spectroscopy. DOI: 10.61011/TP.2023.07.56630.94-23

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