Technical Physics Letters
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- 2022
Growth of SiC, AlN, and GaN films on silicon parts of arbitrary geometry for microelectromechanical applications
Kondratenko T. T.
1, Grashchenko A. S.
2,3, Osipov A. V.
3, Redkov A. V.
2,3, Ubyivovk E. V. 3, Sharofidinov Sh. Sh. 4, Kukushkin S. A.
2,3
1Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
2Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
3St. Petersburg State University, St. Petersburg, Russia
4Ioffe Institute, St. Petersburg, Russia
2Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
3St. Petersburg State University, St. Petersburg, Russia
4Ioffe Institute, St. Petersburg, Russia
Email: vkrkt@yandex.ru, asgrashchenko@bk.ru, andrey.v.osipov@gmail.com, avredkov@gmail.com, sergey.a.kukushkin@gmail.com
A technique is proposed for the formation of epitaxial films of silicon carbide, gallium nitride and aluminum nitride on the surfaces of non-planar silicon parts. Using this technique, a GaN/AlN/SiC/Si heterostructure was grown on the surface of a silicon ring. The samples were studied by scanning electron microscopy, as well as by Raman and energy-dispersive spectroscopy. It is shown that the preliminary deposition of a SiC layer on silicon by the atom-substitution method in which (111) facets are inevitably being formed regardless of the local crystallographic orientation of the substrate surface makes it possible to efficiently grow on silicon parts subsequent layers of III-nitrides of both the wurtzite and sphalerite types. Keywords: GaN, AlN, SiC, silicon, atom substitution, MEMS. DOI: 10.61011/TPL.2023.06.56367.19555
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