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Home » Technical Physics Letters » Year 2023, issue 5 » Article p. 43
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Investigation of the phenomenon of current transition EuGa2S4:Er3+ crystals
Russian version
DOI: 10.21883/TPL.2023.05.56026.19517
Tagiyev O. B.1,2, Kazimova F. A.1, Hadjiyeva G. S.1, Ibragimova T. Sh.1, Asadov E. G.1, Tagiyev K. O.3
1 Institute of Physics of the Ministry of Science and Education, Baku, Azerbaijan
2Baku Branch, Lomonosov Moscow State University, Baku, Azerbaijan
3British Petroleum, Baku, Azerbaijan
Email: oktay58@mail.ru, kazimova-f@mail.ru, ibrahimovatamasha@gmail.com., elsenesedov@gmail.com
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The results of studying the static current-voltage characteristics of EuGa2S4:Er3+crystals at room temperature are presented. The mechanism of current passage in them is revealed. The height of the potential barrier at the metal-semiconductor interface (0.9 eV), the relative permittivity of crystals (3.1), and the concentration of traps (N~ 7.14· 1016 cm-3) were calculated, and the shape of the potential well for the electrons trapped in the traps was determined Keywords: current-voltage, metal-semiconductor, crystals, potential barrier,erbium
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