Technical Physics Letters
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- 2022
Temperature-dependent characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot ring lasers
Gordeev N. Yu.
1, Moiseev E. I.
2, Fominykh N. A.
2, Kryzhanovskaya N. V. 2, Beckman A. A.
1, Kornyshov G. O
3, Zubov F. I.
3, Shernyakov Yu. M.
1, Zhukov A. E.2, Maximov M. V.
3
1Ioffe Institute, St. Petersburg, Russia
2High School of Economics, St. Petersburg, Russia
3Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2High School of Economics, St. Petersburg, Russia
3Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: gordeev@switch.ioffe.ru, emoiseev@hse.ru, fominy-nikita@yandex.ru, spbgate21@gmail.com, supergrigoir@gmail.com, fedyazu@mail.ru, yuri.shernyakov@mail.ioffe.ru, maximov@beam.ioffe.ru
The temperature characteristics of ring lasers with a diameter of 480 μm of an original design with an active region based on 10 layers of InAs/InGaAs/GaAs quantum dots are studied. The lasers demonstrated a low threshold current density (200 A/cm2 at 20oC), the characteristic temperature of the threshold current in the range of 20-100oC was 68 K, the maximum lasing temperature was as high as 130oC. These values are only slightly inferior to the parameters of the edge-emitting lasers fabricated from the same epitaxial wafer. Keywords: semiconductor ring lasers, InAs/GaAs quantum dots, optical waveguide, temperature characteristics.
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