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Study of InP/GaP quantum wells grown by vapor phase epitaxy
Russian version
DOI: 10.21883/TPL.2023.03.55686.19404
Baranov A.I.1,2, Uvarov A. V.1,2, Maksimova A. A.1,2, Vyacheslavova E. A.1,2, Kalyuzhnyy N. A.3, Mintairov S. A.3, Salii R. A.3, Yakovlev G. E.2, Zubkov V. I.2, Gudovskikh A. S.1,2
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
Email: baranov_art@spbau.ru
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We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21 eV, 0.30 eV and 0.93 eV. Keywords: quantum well, capacitance-voltage profiling, electrochemical profiling.
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