Technical Physics Letters
Volumes and Issues
Home » Technical Physics Letters » Year 2023, issue 3 » Article p. 27
<<<>>>
Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN
Russian version
DOI: 10.21883/TPL.2023.03.55679.19452
Gridchin V. O.1,2,3, Soshnikov I. P.2,3,4, Reznik R. R.1, Komarov S. D.5, Pirogov E. V.2, Lendyashova V. V.1,2,4, Kotlyar K. P.1,2,3, Kryzhanovskaya N. V.5, Cirlin G. E.1,2,3,4
1St. Petersburg State University, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
4Ioffe Institute, St. Petersburg, Russia
5HSE University, St. Petersburg, Russia
Email: gridchinvo@gmail.com
PDF
The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor of 2. Keywords: InGaN, silicon, nanostructures, photoluminescence, structural properties, optical properties, molecular beam epitaxy, nitrogen plasma.
  1. S. Chu, W. Li, Y. Yan, T. Hamann, I. Shih, D. Wang, Z. Mi, Nano Futures, 1 (2), 022001 (2017). DOI: 10.1088/2399-1984/aa88a1
  2. N.H. Alvi, P.E.D. Soto Rodriguez, P. Kumar, V.J. Gomez, P. Aseev, A.H. Alvi, M.A. Alvi, M. Willander, R. Notzel, Appl. Phys. Lett., 104 (22), 223104 (2014). DOI: 10.1063/1.4909515
  3. I. Ho, G. Stringfellow, Appl. Phys. Lett., 69 (18), 2701 (1996). DOI: 10.1063/1.117683
  4. M.A. Der Maur, A. Pecchia, G. Penazzi, R. Walter, D.C. Aldo, Phys. Rev. Lett., 116 (2), 027401 (2016). DOI: 10.1103/PhysRevLett.116.027401
  5. K.F. Jorgensen, B. Bonef, J.S. Speck, J. Cryst. Growth, 546, 125738 (2020). DOI: 10.1016/j.jcrysgro.2020.125738
  6. H. Turski, M. Siekacz, Z.R. Wasilewski, M. Sawicka, S. Porowski, C. Skierbiszewski, J. Cryst. Growth, 367, 115 (2013). DOI: 10.1016/j.jcrysgro.2012.12.026
  7. V.O. Gridchin, R.R. Reznik, K.P. Kotlyar, A.S. Dragunova, N.V. Kryzhanovskaya, A.Yu. Serov, S.A. Kukushkin, G.E. Cirlin, Pis'ma Zh. Tekh. Fiz., 47 (21), 32 (2021) (in Russian). DOI: 10.21883/PJTF.2021.21.51626.18894
  8. T. Tabata, J. Paek, Y. Honda, M. Yamaguchi, H. Amano, Phys. Status Solidi C, 9 (3-4), 646 (2012). DOI: 10.1002/pssc.201100446
  9. V.O. Gridchin, K.P. Kotlyar, R.R. Reznik, A.S. Dragunova, N.V. Kryzhanovskaya, V.V. Lendyashova, D.A. Kirilenko, I.P. Soshnikov, D.S. Shevchuk, G.E. Cirlin, Nanotechnology, 32 (33), 335604 (2021). DOI: 10.1088/1361-6528/ac0027
  10. P.E.D. Soto Rodriguez, P. Kumar, V.J. Gomez, N.H. Alvi, J.M. Manuel, F.M. Morales, J.J. Jimenez, R. Garci a, E. Calleja, R. Notzel, Appl. Phys. Lett., 102 (17), 173105 (2013). DOI: 10.1063/1.4803017
  11. P. Kumar, P.E.D. Rodriguez, V.J. Gomez, N.H. Alvi, E. Calleja, R. Notzel, Appl. Phys. Express, 6 (3), 035501 (2013). DOI: 10.7567/APEX.6.035501
  12. S.Valdueza-Felip, E. Bellet-Amalric, A. Nunez-Cascajero, Y. Wang, M.-P. Chauvat, P. Ruterana, S. Pouget, K. Lorenz, E. Alves, E. Monroy, J. Appl. Phys., 116 (23), 233504 (2014). DOI: 10.1063/1.4903944
  13. R.R. Reznik, V.O. Gridchin, K.P. Kotlyar, N.V. Kryzhanovskaya, S.V. Morozov, G.E. Cirlin, Semiconductors, 54 (9), 1075 (2020). DOI: 10.1134/S1063782620090237
  14. I.P. Soshnikov, G.E. Cirlin, A.A. Tonkikh, V.N. Nevedomskivi, Yu.B. Samsonenko, V.M. Ustinov, Phys. Solid State, 49 (8), 1440 (2007). DOI: 10.1134/S1063783407080069
  15. C.-C. Chen, C.-C. Yeh, C.-H. Chen, M.-Y. Yu, H.-L. Liu, J.-J. Wu, K.-H. Chen, L.-C. Chen, J.-Y. Peng, Y.-F. Chen, J. Am. Chem. Soc., 123 (12), 2791 (2001). DOI: 10.1021/ja0040518
  16. X.M. Cai, Y.H. Leung, K.Y. Cheung, K.H. Tam, A.B. Djurivsic, M.H. Xie, H.Y. Chen, S. Gwo, Nanotechnology, 17 (9), 2330 (2006). DOI: 10.1088/0957-4484/17/9/042
  17. G. Orsal, Y.E. Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, J.P. Salvestrini, Opt. Mater. Express, 4 (5), 1030 (2014). DOI: 10.1364/OME.4.001030
  18. V.Yu. Davydov, A.A. Klochikhin, Semiconductors, 38 (8), 861 (2004). DOI: 10.1134/1.1787109.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru