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Home » Technical Physics » Year 2023, issue 2 » Article p. 254
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Synthesis of arrays nanostructured porous silicon wires in electron conductivity type silicon with crystallographic orientation (111)
Russian version
DOI: 10.21883/TP.2023.02.55481.109-22
Gagarina A.Yu.1, Bogoslovskaya L.S.1, Spivak Yu. M.1, Novikova K.N., Kuznetsov A.1, Moshnikov V.A.1
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: gagarina.au@gmail.com
PDF
The method of modified metal-assisted electrochemical etching was proposed and arrays of nanostructured porous silicon wires on n-type monocrystalline silicon substrate with crystallographic orientation (111) were obtained. The influence of the electrolyte composition at the second stage of obtaining on the morphology of silicon wires by scanning electron microscopy methods was revealed. The phase composition of porous silicon wires was controlled by Raman spectroscopy. Keywords: Porous silicon,porous Silicon nanowires, MACE, Nanomaterials, Raman spectroscopy.
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