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Peculiarities of Photoelectron Spectra of Ge Implanted with Na+ Ions
Russian version
DOI: 10.21883/TPL.2023.01.55342.19311
Abraeva S. T.1, Tashmukhamedova D. A.1, Yusupjanova M. B.1, Umirzakov B. E. 1
1Tashkent State Technical University, Tashkent, Uzbekistan
Email: ftmet@mail.ru
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Using the methods of Auger electron and photoelectron spectroscopy and light absorption spectroscopy, the composition, densities of state of electrons in the valence band, and parameters of the energy bands of Ge (111) implanted with Na+ ions with an energy of E0=0.5 keV at a dose of Dsat=6· 1016 cm-2 and a thin layer of NaGe2 obtained by annealing ion-implanted Ge. It is shown that a narrow n-type band (~ 0.2 eV) appears in the Ge valence electron spectrum after ion implantation near the bottom of the conduction band, which is explained by the presence of a large number of unbound Na atoms in the ion-implanted layer. NaGe2 nanofilms with a band gap of ~ 0.45 eV was obtained for the first time by annealing ion-implanted Ge. Keywords: nanostructure, photoelectrons, Auger electron spectroscopy, absorption spectrum, hybridized states, electron state densities, ion implantation.
  1. S.K. Ray, S. Das, R.K Singha, S. Manna, A. Dhar, Nanoscale Res. Lett., 6, 224 (2011). DOI: 10.1186/1556-276X-6-224
  2. S. Das, K. Das, R.K. Singha, A. Dhar, S.K. Ray, Appl. Phys. Lett., 91 (23), 233118 (2007). DOI: 10.1063/1.2821114
  3. K. Das, M. NandaGoswami, R. Mahapatra, G.S. Kar, A. Dhar, H.N. Acharya, S. Maikap, J.-H. Lee, S.K. Ray, Appl. Phys. Lett., 84 (8), 1386 (2004). DOI: 10.1063/1.1646750
  4. J.-Y. Zhang, Y.-H. Ye, X.-L. Tan, X.-M. Bao, Appl. Phys. A, 71 (3), 299 (2000). DOI: 10.1007/s003390000518
  5. M.H. Liao, C.-Y. Yu, T.-H. Guo, C.-H. Lin, C.W. Liu, IEEE Electron Dev. Lett., 27 (4), 252 (2006). DOI: 10.1109/LED.2006.870416
  6. G.A. Maksimov, Z.F. Krasil'nik, D.O. Filatov, M.V. Kruglova, S.V. Morozov, D.Yu. Remizov, D.E. Nikolichev, V.G. Shengurov, Phys. Solid State, 47 (1), 22 (2005). DOI: 10.1134/1.1853436
  7. D. Cooper, A. Beche, J.M. Hartmann, L. Hutin, C. Le. Royer, J.L. Rouviere, J. Phys.: Conf. Ser., 326, 012025 (2011). DOI: 10.1088/1742-6596/326/1/012025
  8. R.G. Valeev, V.M. Vetoshkin, D.V. Surnin, Khim. Fiz. Mezoskopiya, 11 (2), 204 (2009) (in Russian). https://www.elibrary.ru/item.asp?id=18248341
  9. G.N. Kamaev, V.A. Volodin, G.K. Krivyakin, Tech. Phys. Lett., 47, 609 (2021). DOI: 10.1134/S1063785021060237
  10. N. Fourches, IEEE Trans. Electron Dev., 64 (4), 1619 (2017). DOI: 10.1109/TED.2017.2670681
  11. R.I. Batalov, V.V. Vorobev, V.I. Nuzhdin, V.F. Valeev, R.M. Bayazitov, N.M. Lyadov, Yu.N. Osin, A.L. Stepanov, Tech. Phys., 61 (12), 1861 (2016). DOI: 10.1134/S1063784216120069
  12. O.N. Gorshkov, I.N. Antonov, M.E. Shenina, A.Yu. Dudin, A.P. Kasatkin, Vestn. Nizhegorod. Univ., No. 4-1, 38 (2010) (in Russian). https://cyberleninka.ru/article/n/formirovanie-nanorazmernyh-chastits-zolota-v-tonkih-amorfnyh-plenkah-dioksida-germaniya-metodom-ionnoy-implantatsii/viewer
  13. A.L. Stepanov, V.V. Vorob'ev, V.I. Nuzhdin, V.F. Valeev, Yu.N. Osin, Tech. Phys. Lett., 44 (4), 354 (2018). DOI: 10.1134/S1063785018040260
  14. D.A. Tashmukhamedova, B.E. Umirzakov, M.A. Mirdzhalilova, Izv. Ross. Akad. Nauk. Ser. Fiz., 68 (3), 424 (2004) (in Russian). https://www.elibrary.ru/item.asp?id=17641066
  15. D.A. Tashmukhamedova, B.E. Umirzakov, E.U. Baltaev, Poverkhn.: Rentgenovskie, Sinkhrotronnye Neitr. Issled., No. 8, 101 (2003) (in Russian). https://www.elibrary.ru/item.asp?id=17316038
  16. D.A. Tashmukhamedova, M.B. Yusupjanova, A.K. Tashatov, B.E. Umirzakov, J. Surf. Investig., 12 (5), 902 (2018). DOI: 10.1134/S1027451018050117
  17. D.A. Tashmukhamedova, Bull. Russ. Acad. Sci. Phys., 70 (8), 1409 (2006)
  18. B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov, N.M. Mustafoeva, D.M. Muradkabilov, Semiconductors, 54 (11), 1424 (2020). DOI: 10.1134/S1063782620110263
  19. A.V. Kacyuba, A.V. Dvurechenskii, G.N. Kamaev, V.A. Volodin, A.Y. Krupin, Mater. Lett., 268 (6),127554 (2020). DOI: 10.1016/J.MATLET.2020.127554

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