Technical Physics
To authors
GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for high-power semiconductor infrared emitters
Gulyaev D. V.
1, Dmitriev D. V.
1, Fateev N. V.
1, Protasov D Yu.
1, Kozhukhov A. S.
1, Zhuravlev K. S.
1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: gulyaev@isp.nsc.ru, ddmitriev@isp.nsc.ru, fateev@isp.nsc.ru, protasov@isp.nsc.ru, kozhukhov@isp.nsc.ru, zhur@isp.nsc.ru
The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined. The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated. It has been shown that it is possible to increase the quantum luminescence efficiency of the studied heterostructures up to 75-80% at the average power by the combined optimization of these processes. Keywords: GaAs/AlGaAs and InGaAs/AlGaAs heterostructures, internal quantum exit, photoluminescence, molecular-beam epitaxy.
- W.A. Cahyadi, Y. Ho Chung. Opt. Express, 26 (15), 19657 (2018). DOI: 10.1364/OE.26.019657
- T. Tamura, Y. Maeda, M. Sekine, M. Yoshida. Electronics, 3, 282 (2014). DOI: 10.3390/electronics3020282
- A.C. Caputo. Digital Video Surveillance and Security (Elsevier Inc., 2014)
- E.F. Schubert. Light-emitting diodes (second edition) (Cambridge University Press, 2006)
- A.V. Malevskaya, N.A. Kalyuzhny, D.A. Malevsky, S.A. Mintairov, R.A. Saliy, A.N. Panchak, P.V. Pokrovsky, N.S. Potapovich, V.M. Andreev. FTP, 55 (7), 614 (2021) (in Russian) DOI: 10.21883/FTP.2021.07.51028.9646
- S.-Y. Lee, E. Lee, J.-H. Moon, B. Choi, J.-T. Oh, H.-H. Jeong, T.-Y. Seong, H. Amano. Photon. Technol. Lett. IEEE, 32 (17), 1041 (2020). DOI: 10.1109/LPT.2020.3010820
- H.-P.D. Yang, J.-N. Liu, F.-I. Lai, H.-Ch. Kuo, J.Y. Chi. J. Modern Opt., 55 (9), 1509 (2008). DOI: 10.1080/09500340701691608
- M. Li, H. Zhen, Y. Jing, H. Wang, N. Li. Opt. Quant Electron., 48 (2), 140 (2016). DOI: 10.1007/s11082-016-0415-3
- I. Schnitzer, E. Yablonovitch, C. Caneau, T.J. Gmitter, A. Scherer. Appl. Phys. Lett., 63 (16), 2174 (1993). DOI: 10.1063/1.110575
- R. Windisch, C. Rooman, B. Dutta, A. Knobloch, G. Borghs, G.H. Dohler, P. Heremans. IEEE J. Selected Topics in Quant. Electronics, 8 (2), 248 (2002). DOI: 10.1109/2944.999177
- T. Kato, H. Susawa, M. Hirotani, T. Saka, Y. Ohashi, E. Shichi, S. Shibata. J. Crystal Growth, 1 07 (1-4), 832 (1991). DOI: 10.1016/0022-0248(91)90565-M
- S.-Ch. Ahn, B.-T. Lee, W.-Ch. An, D.-K. Kim, I.-K. Jang, J.-S. So, H.-J. Lee. J. Korean Phys. Society, 69 (1), 91 (2016). DOI: 10.3938/jkps.69.91
- D. Ban, H. Luo, H.C. Liu, Z.R. Wasilewski, A.J. SpringThorpe, R. Glew, M. Buchanan. J. Appl. Phys., 96 (9), 5243 (2004). DOI: 10.1063/1.1785867
- R. Windisch, B. Dutta, M. Kuijk, A. Knobloch, S. Meinlschmidt, S. Schoberth, P. Kiesel, G. Borghs, G.H. Dohler, P. Heremans. IEEE Trans. Electron. Dev., 47 (7), 1492 (2000). DOI: 10.1109/16.848298
- L. Han, M. Zhao, X. Tang, W. Huo, Z. Deng, Y. Jiang, W. Wang, H. Chen, Ch. Du, H. Jia. J. Appl. Phys., 127 (8), 085706 (2020). DOI: 10.1063/1.5136300
- I. Schnitzer, E. Yablonovitch, C. Caneau, T.J. Gmitter. Appl. Phys. Lett., 62 (2), 131 (1993). DOI: 10.1063/1.109348
- P. Bai, Y. Zhang, T. Wang, Z. Shi, X. Bai, Ch. Zhou, Y. Xie, L. Du, M. Pu, Z. Fu, J. Cao, X. Guo, W. Shen. Semicond. Sci. Technol., 35 (3), 035021 (2020). DOI: 10.1088/1361-6641/ab6dbf
- M.A. Ladugin, A.A. Marmalyuk, A.A. Padalitsa, K.Yu. Telegin, A.V. Lobintsov, S.M. Sapozhnikov, A.I. Danilov, A.V. Podkopaev, V.A. Simakov. Quant. Electron., 47 (8), 693 (2017). DOI: 10.1070/QEL16441
- A.L. Weisenhorn, P. Maivald, H.-J. Butt, P.K. Hansma. Phys. Rev. B, 45 (19), 11226 (1992). DOI: 10.1103/physrevb.45.11226
- R.F. Kubin, A.N. Fletcher. J. Luminescence, 27 (4), 455 (1982). DOI: 10.1016/0022-2313(82)90045-X
- P.A. Bokhan, N.V. Fateev, T.V. Malin, I.V. Osinnykh, D.E. Zakrevsky, K.S. Zhuravlev. J. Luminescence, 203 (4), 127 (2018). DOI: 10.1016/j.jlumin.2018.06.034
- Y.-S. Yoo, T.-M. Roh, J.-H. Na, S.J. Son, Y.-H. Cho. Appl. Phys. Lett., 102 (21), 211107 (2013). DOI: 10.1063/1.4807485
- T. Murotani, T. Shimanoe, S. Mitsui. J. Crystal Growth, 45, 308 (1978); DOI: 10.1016/0022-0248(78)90453-0
- E.C. Larkins, J.S. Harris. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs, ed. by Robin F.C. Farrow (William Andrew Inc., 1995)
- F. Stietz, Th. Allinger, V. Polyakov, J. Woll, A. Goldmann, W. Erfurth, G.J. Lapeyre, J.A. Schaefer. Appl. Surf. Sci., 104/105, 169 (1996). DOI: 10.1016/S0169-4332(96)00140-7
- M. Jalonen, M. Toivonen, P. Savolainen, J. Kongas, M. Pessa. Appl. Phys. Lett., 71 (4), 479 (1997). DOI: 10.1063/1.119584
- J. Dekker, A. Tukiainen, N. Xiang, S. Orsila, M. Saarinen, M. Toivonen, M. Pessa, N. Tkachenko, H. Lemmetyinen. J. Appl. Phys., 86 (7), 3709 (1999). DOI: 10.1063/1.371283
- H.H. Yee, Ch.-P. Yu. Appl. Opt., 42 (15), 2695 (2003). DOI: 10.1364/AO.42.002695
- T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies, J.Y. Duboz. J. Appl. Phys., 101 (7), 073510 (2007). DOI: 10.1063/1.2719289
- H. Peyre, J. Camassel, W.P. Gillin, K.P. Homewood, R. Grey. Mater. Sci. Eng. B, 28 (1-3), 332 (1994). DOI: 10.1016/0921-5107(94)90077-9
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