Technical Physics Letters
To authors
Replacing tunnel junctions in InP with conduction channels with GaP crystallites
Marichev A. E.1, Epoletov V. S.1, Vlasov A. S.1, Pushnyi B. V.1, Lihachev A. I.1, Nashchekin A. V.1
1Ioffe Institute, St. Petersburg, Russia
Email: aemarichev@mail.ioffe.ru
The results of investigations by the method of Electron beam-induced current of p-n-junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the introduction of crystallites into the space charge region leads to short-circuiting of the p-n-junction. The quality of the material grown on top of the crystallites allows to create of photoactive regions, as evidenced by measurements of the photoluminescence spectra. Keywords: crystallites, tunnel junction, connecting element.
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