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Replacing tunnel junctions in InP with conduction channels with GaP crystallites
Russian version
DOI: 10.21883/TPL.2022.14.55126.18893
Marichev A. E.1, Epoletov V. S.1, Vlasov A. S.1, Pushnyi B. V.1, Lihachev A. I.1, Nashchekin A. V.1
1Ioffe Institute, St. Petersburg, Russia
Email: aemarichev@mail.ioffe.ru
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The results of investigations by the method of Electron beam-induced current of p-n-junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the introduction of crystallites into the space charge region leads to short-circuiting of the p-n-junction. The quality of the material grown on top of the crystallites allows to create of photoactive regions, as evidenced by measurements of the photoluminescence spectra. Keywords: crystallites, tunnel junction, connecting element.
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