Technical Physics Letters
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Criterion for the growth selectivity of III-V and III-N nanowires on masked substrates
A model is developed for the initial stage of nucleation of III-V nanowires including nitrides (III-V NWs) and other nanostructures grown by selective area epitaxy on masked substrates with regular arrays of pinholes. A criterion for the growth selectivity is obtained, which ensures nucleation of III-V NWs within the pinholes but not on a mask surface. The temperature, group III and V fluxes, pinhole radius and pitch dependences of the selective growth zones are analyzed Keywords: III-V nanowires, selective area epitaxy, masked substrate, nucleation.
- F. Glas, Phys. Rev. B, 74, 121302(R) (2006). DOI: 10.1103/PhysRevB.74.121302
- L.C. Chuang, M. Moewe, C. Chase, N.P. Kobayashi, C. Chang-Hasnain, S. Crankshaw, Appl. Phys. Lett., 90, 043115 (2007). DOI: 10.1063/1.2436655
- V.G. Dubrovskii, N.V. Sibirev, X. Zhang, R.A. Suris, Cryst. Growth Des., 10, 3949 (2010). DOI: 10.1021/cg100495b
- J. Noborisaka, J. Motohisa, T. Fukui, Appl. Phys. Lett., 86, 213102 (2005). DOI: 10.1063/1.1935038
- K.P. Bassett, P.K. Mohseni, X. Li, Appl. Phys. Lett., 106, 133102 (2015). DOI: 10.1063/1.4916347
- Q. Gao, V.G. Dubrovskii, P. Caroff, J. Wong-Leung, L. Li, Y. Guo, L. Fu, H.H. Tan, C. Jagadish, Nano Lett., 16, 4361 (2016). DOI: 10.1021/acs.nanolett.6b01461
- M. Zeghouane, Y. Andre, G. Avit, J. Jridi, C. Bougerol, P.-M. Coulon, P. Ferret, D. Castelluci, E. Gil, P. Shields, V.G. Dubrovskii, A. Trassoudaine, Nano Futures, 4, 025002 (2020). DOI: 10.1088/2399-1984/ab8450
- S. Hertenberger, D. Rudolph, M. Bichler, J.J. Finley, G. Abstreiter, G.J. Koblmuller, Appl. Phys., 108, 114316 (2010). DOI: 10.1063/1.3525610
- V.O. Gridchin, L.N. Dvoretckaia, K.P. Kotlyar, R.R. Reznik, A.V. Parfeneva, A.S. Dragunova, N.V. Kryzhanovskaya, V.G. Dubrovskii, G.E. Cirlin, Nanomaterials, 12, 2341 (2022). DOI: 10.3390/nano12142341
- J. Kruse, L. Lymperakis, S. Eftychis, A. Adikimenakis, G. Doundoulakis, K. Tsagaraki, M. Androulidaki, A. Olziersky, P. Dimitrakis, V. Ioannou-Sougleridis, J. Appl. Phys., 119, 224305 (2016). DOI: 10.1063/1.4953594
- F. Schuster, M. Hetzl, S. Weiszer, J.A. Garrido, M. De La Mata, C. Magen, J. Arbiol, M. Stutzmann, Nano Lett., 15, 1773 (2015). DOI: 10.1021/nl504446r
- C.-Y. Chi, C.-C. Chang, S. Hu, T.-W. Yeh, S.B. Cronin, P.D. Dapkus, Nano Lett., 13, 2506 (2013). DOI: 10.1021/nl400561j
- M. Friedl, K. Cerveny, P. Weigele, G. Tutuncuoglu, S. Marti-Sanchez, C. Huang, T. Patlatiuk, H. Potts, Z. Sun, M.O. Hill, L. Guniat, W. Kim, M. Zamani, V.G. Dubrovskii, J. Arbiol, L.J. Lauhon, D.M. Zumbuhl, A. Fontcuberta i Morral, Nano Lett., 18, 2666 (2018). DOI: 10.1021/acs.nanolett.8b00554
- V.G. Dubrovskii, S. Escobar Steinvall, V. de Mestral, R. Paul, J.-P. Leran, M. Zamani, E.Z. Stutz, A. Fontcuberta i Morral, Cryst. Growth Des., 21, 4732 (2021). DOI: 10.1021/acs.cgd.1c00569
- V.G. Dubrovskii, I.P. Soshnikov, N.V. Sibirev, G.E. Cirlin, V.M. Ustinov, J. Cryst. Growth, 289, 31 (2006). DOI: 10.1016/j.jcrysgro.2005.10.112
- P. Hanggi, P. Talkner, M. Borkovec, Rev. Mod. Phys., 62, 251 (1990). DOI: 10.1103/RevModPhys.62.251
- V.G. Dubrovskii, Yu.Yu. Hervieu, J. Cryst. Growth, 401, 431 (2014). DOI: 10.1016/j.jcrysgro.2014.01.015
- D. Dede, F. Glas, V. Piazza, N. Morgan, M. Friedl, L. Guniat, V.G. Dubrovski, A. Fontcuberta i Morral, Nanotechnology, in press (2022)
- V.G. Dubrovskii, Tech. Phys. Lett., 47, 601 (2021). DOI: 10.1134/S1063785021060213
- V.G. Dubrovskii, Phys. Status Solidi B, 171, 345 (1992). DOI: 10.1002/pssb.2221710206
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