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Determination of the donor impurity concentration in thin i-InGaAs layers

Russian version

DOI: 10.21883/TPL.2022.11.54886.19348

Aksenov M. S.^1,2, Zakirov E. R.¹, Kovchavtsev A.P.¹, Nastovyak A.E.¹, Dmitriev D. V.¹

¹Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
²Novosibirsk State University, Novosibirsk, Russia

Email: aksenov@isp.nsc.ru

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Abstract
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This paper describes a technique that makes it possible, by analyzing the capacitance-voltage characteristics of metal-insulator-semiconductor or metal-semiconductor structures, to determine the concentration of the background donor impurity in undoped i-In_0.53Ga_0.47As layers with a thickness less than the width of the space charge region in the near-surface region of the semiconductor in strong inversion mode. Keywords: InGaAs, MIS structure, capacitance-voltage characteristic, dopant, space charge region.

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