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Determination of the donor impurity concentration in thin i-InGaAs layers

Russian version

DOI: 10.21883/TPL.2022.11.54886.19348

Aksenov M. S.^1,2, Zakirov E. R.¹, Kovchavtsev A.P.¹, Nastovyak A.E.¹, Dmitriev D. V.¹

¹Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
²Novosibirsk State University, Novosibirsk, Russia

Email: aksenov@isp.nsc.ru

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Abstract
References
Статистика просмотров

This paper describes a technique that makes it possible, by analyzing the capacitance-voltage characteristics of metal-insulator-semiconductor or metal-semiconductor structures, to determine the concentration of the background donor impurity in undoped i-In_0.53Ga_0.47As layers with a thickness less than the width of the space charge region in the near-surface region of the semiconductor in strong inversion mode. Keywords: InGaAs, MIS structure, capacitance-voltage characteristic, dopant, space charge region.

A. Rogalsky, Infrared detectors, 2nd ed. (CRC Press, Boca Raton, 2020)
K.S. Zhuravlev, A.L. Chizh, K.B. Mikitchuk, A.M. Gilinsky, I.B. Chistokhin, N.A. Valisheva, D.V. Dmitriev, A.I. Toropov, M.S. Aksenov, J. Semicond., 43, 012302 (2022). DOI: 10.1088/1674-4926/43/1/012302
V.V. Preobrazhenskii, I.B. Chistokhin, M.A. Putyato, N.A. Valisheva, E.A. Emelyanov, M.O. Petrushkov, A.S. Pleshkov, I.G. Neizvestny, I.I. Ryabtsev, Optoelectron. Instrum. Data Proc., 57, 485 (2021). DOI: 10.3103/S8756699021050125
E. O'Connor, K. Cherkaoui, S. Monaghan, B. Sheehan, I.M. Povey, P.K. Hurley, Appl. Phys. Lett., 110, 032902 (2017). DOI: 10.1063/1.4973971
S. Karata s, A. Turut, Physica B, 381, 199 (2006). DOI: 10.1016/j.physb.2006.01.412
S. Eom, M.-W. Kong, K.-S. Seo, in Recent advances in nanophotonics: fundamentals and applications (IntechOpen, 2020), ch. 7. DOI: 10.5772/intechopen.92424
S.K. Kim, D.-M. Geum, J.-P. Shim, C.Z. Kim, H.-J. Kim, J.D. Song, W.J. Choi, S.-J. Choi, D.H. Kim, S. Kim, D.M. Kim, Appl. Phys. Lett., 110, 043501 (2017). DOI: 10.1063/1.4974893
C.-Y. Chang, C. Yokoyama, M. Takenaka, S. Takagi, IEEE Trans. Electron Dev., 64, 2519 (2017). DOI: 10.1109/TED.2017.2696741
M.S. Aksenov, N.A. Valisheva, D.V. Gorshkov, G.Y. Sidorov, I.P. Prosvirin, A.K. Gutakovskii, J. Appl. Phys., 131, 085301 (2022). DOI: 10.1063/5.0078405
P.K. Hurley, E. O'Connor, V. Djara, S. Monaghan, I.M. Povey, R.D. Long, B. Sheehan, J. Lin, P.C. McIntyre, B. Brennan, R.M. Wallace, M.E. Pemble, K. Cherkaoui, IEEE Trans. Dev. Mater. Rel., 13, 429 (2013). DOI: 10.1109/TDMR.2013.2282216
F. Palumbo, F.L. Aguirre, S.M. Pazos, I. Krylov, R. Winter, M. Eizenberg, Solid-State Electron., 149, 71 (2018). DOI: 10.1016/j.sse.2018.07.006
A.P. Kovchavtsev, A.V. Tsarenko, A.A. Guzev, M.S. Aksenov, V.G. Polovinkin, A.E. Nastovjak, N.A. Valisheva, J. Appl. Phys., 118, 125704 (2015). DOI: 10.1063/1.4931772
http://www.ioffe.ru/SVA/NSM/Semicond/GaInAs/index.html
Y. Yuan, L. Wang, B. Yu, B. Shin, J. Ahn, P.C. McIntyre, P.M. Asbeck, M.J.W. Rodwell, Y. Taur, IEEE Electron Dev. Lett., 32, 485 (2011). DOI: 10.1109/LED.2011.2105241

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