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Home » Technical Physics Letters » Year 2022, issue 11 » Article p. 34
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Determination of the donor impurity concentration in thin i-InGaAs layers
Russian version
DOI: 10.21883/TPL.2022.11.54886.19348
Aksenov M. S.1,2, Zakirov E. R.1, Kovchavtsev A.P.1, Nastovyak A.E.1, Dmitriev D. V.1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: aksenov@isp.nsc.ru
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This paper describes a technique that makes it possible, by analyzing the capacitance-voltage characteristics of metal-insulator-semiconductor or metal-semiconductor structures, to determine the concentration of the background donor impurity in undoped i-In0.53Ga0.47As layers with a thickness less than the width of the space charge region in the near-surface region of the semiconductor in strong inversion mode. Keywords: InGaAs, MIS structure, capacitance-voltage characteristic, dopant, space charge region.
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