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Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes
Russian version
DOI: 10.21883/TPL.2022.10.54803.19326
Ivanov M. S. 1, Rozhkov A. V. 1, Rodin P. B. 1
1Ioffe Institute, St. Petersburg, Russia
Email: m.ivanov@mail.ioffe.ru
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Switching of a high-voltage GaAs diode to the conducting state in the delayed impact-ionization mode is simulated and the results are compared with experimental data. It is shown that the effect of long-term (up to 100 ns) sustaining of the conducting state of the diode after switching is due to the appearance of narrow (of the order of a micrometer) ionizing Gunn domains, the so-called collapsing domains, in the electron-hole plasma. Impact ionization in collapsing domains and in the edge (cathode and anode) domains of a strong electric field (~ 300 kV/cm) maintains a high concentration of nonequilibrium carriers (≥ 1017 cm-3) during the entire duration of the applied reverse polarity voltage pulse. Keywords: high-voltage GaAs diodes, impact ionization, subnanosecond switches, Gunn effect, lock-on effect.
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