Technical Physics Letters
Volumes and Issues
Home » Technical Physics Letters » Year 2022, issue 10 » Article p. 13
<<<>>>
Investigation of metal-insulator-semiconductor structure based on CdHgTe and HfO2
Russian version
DOI: 10.21883/TPL.2022.10.54789.19279
Gorshkov D.V. 1, Zakirov E.R. 1, Sidorov G.Y. 1, Sabinina I.V. 1, Marin D.V. 1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: GorshkovDV@isp.nsc.ru
PDF
The interface between Cd0.22Hg0.78Te and HfO2 grown by plasma-enhanced atomic layer deposition at a temperature of 120oC in a specifically optimized deposition mode has been studied. The method used in this work for measuring the admittance of metal-dielectric-semiconductor structures made it possible to establish that their electrophysical parameters are uniform over the sample surface. The spectrum of fast surface states density at the HfO2-Cd0.22Hg0.78Te interface has been calculated. Keywords: CdHgTe, HfO2, ALD, C-V, passivating coating.
  1. V.Ya. Aleshkin, A.A. Dubinov, V.V. Rumyantsev, M.A. Fadeev, O.L. Domnina, N.N. Mikhailov, S.A. Dvoretsky, F. Teppe, V.I. Gavrilenko, S.V. Morozov, J. Phys.: Condens. Matter, 30, 495301 (2018). DOI: 10.1088/1361-648X/aaebf5
  2. V.M. Bazovkin, V.S. Varavin, V.V. Vasil'ev, A.V. Glukhov, D.V. Gorshkov, S.A. Dvoretsky, A.P. Kovchavtsev, Yu.S. Makarov, D.V. Marin, I.V. Mzhelsky, V.G. Polovinkin, V.G. Remesnik, I.V. Sabinina, Yu.G. Sidorov, G.Yu. Sidorov, A.S. Stroganov, A.V. Tsarenko, M.V. Yakushev, A.V. Latyshev, J. Commun. Technol. Electron., 64, 1011 (2019). DOI: 10.1134/S1064226919090043
  3. A.V. Zverev, A.O. Suslyakov, I.V. Sabinina, G.Yu. Sidorov, M.V. Yakushev, V.D. Kuzmin, V.S. Varavin, V.G. Remesnik, Yu.S. Makarov, A.V. Predein, D.V. Gorshkov, S.A. Dvoretsky, V.V. Vasil'ev, Yu.G. Sidorov, A.V. Latyshev, I.I. Kremis, J. Commun. Technol. Electron., 64, 1024 (2019). DOI: 10.1134/S1064226919090171
  4. A.V. Galeeva, A.I. Artamkin, A.S. Kazakov, S.N. Danilov, S.A. Dvoretskiy, N.N. Mikhailov, L.I. Ryabova, D.R. Khokhlov, Beilstein J. Nanotechnol., 9, 1035 (2018). DOI: 10.3762/bjnano.9.96
  5. Y. Nemirovsky, G. Bahir, J. Vac. Sci. Technol. A, 7, 450 (1989). DOI: 10.1116/1.576202
  6. P. Zhang, Z.-H. Ye, C.-H. Sun, Y.-Y. Chen, T.-N. Zhang, X. Chen, C. Lin, R.-J. Ding, L. He, J. Electron. Mater., 9, 4716 (2016). DOI: 10.1007/s11664-016-4686-z
  7. D.V. Gorshkov, G.Yu. Sidorov, I.V. Sabinina, Yu.G. Sidorov, D.V. Marin, M.V. Yakushev, Tech. Phys. Lett., 46, 741 (2020). DOI: 10.1134/S1063785020080064
  8. A.P. Kovchavtsev, G.Yu. Sidorov, A.E. Nastovjak, A.V. Tsarenko, I.V. Sabinina, V.V. Vasilyev, J. Appl. Phys., 121, 125304 (2017). DOI: 10.1063/1.4978967
  9. A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, J. Phys. Chem. Solids, 102, 42 (2016). DOI: 10.1016/j.jpcs.2016.10.015
  10. N. Goel, P. Majhi, C.O. Chui, W. Tsai, D. Choi, J.S. Harris, Appl. Phys. Lett., 89, 163517 (2006). DOI: 10.1063/1.2363959
  11. N. Miyata, A. Ohtake, M. Ichikawa, T. Mori, T. Yasuda, Appl. Phys. Lett., 104, 232104 (2014). DOI: 10.1063/1.4882643
  12. A. Hardtdegen, H. Zhang, S. Hoffmann-Eifert, ECS Trans., 75, 177 (2016). DOI: 10.1149/07506.0177ecst
  13. A. Sharma, V. Longo, M.A. Verheijen, A.A. Bol, W.M.M.E. Kessels, J. Vac. Sci. Technol. A, 35, 01B130 (2017). DOI: 10.1116/1.4972210
  14. E.R. Zakirov, V.G. Kesler, G.Yu. Sidorov, I.P. Prosvirin, A.K. Gutakovsky, V.I. Vdovin, Semicond. Sci. Technol., 34, 065007 (2019). DOI: 10.1088/1361-6641/ab1961
  15. S.B.S. Heil, J.L. van Hemmen, J. Vac. Sci. Technol. A, 25, 1357 (2007). DOI: 10.1116/1.2753846
  16. T.P. Smirnova, L.V. Yakovkina, V.N. Kitchai, V.V. Kaichev, Yu.V. Shubin, N.B. Morozova, K.V. Zherikova, J. Phys. Chem. Solids, 69, 685 (2008). DOI: 10.1016/j.jpcs.2007.07.123
  17. D. Barreca, A. Milanov, R. Fischer, A. Devi, E. Tondello, Surf. Sci. Spectra, 14, 34 (2007). DOI: 10.1116/11.20080401
  18. E.H. Nicollian, J.R. Brews, MOS (metal oxide semiconductor) physics and technology (John Wiley and Sons, Inc, 2002)
  19. R. Engel-Herbert, Y. Hwang, S. Stemmer, J. Appl. Phys., 108, 124101 (2010). DOI: 10.1063/1.3520431

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru