Technical Physics Letters
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Two-state lasing in injection microdisks with InAs/InGaAs quantum dots
Makhov I. S.
1, Beckman A. A.2, Kulagina M. M.
2, Guseva Yu. A.
2, Kryzhanovskaya N. V.
1, Nadtochiy A. M.
1, Maximov M. V.
3, Zhukov A. E.
1
1HSE University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Spectral dependencies of the electroluminescence intensity of a microdisk laser with a diameter of 31 μm with active region based on InAs/InGaAs quantum dots, operating in the continuous-wave regime, are investigated in a wide range of injection currents. Simultaneous lasing through the ground and excited states of quantum dots under intense excitation is demonstrated in injection microdisk laser for the first time. At low pumping powers lasing occurs via ground states of quantum dots only. Keywords: microlaser, quantum dots, two-state lasing, ground state, excited state.
- A.E. Zhukov, N.V. Kryzhanovskaya, E.I. Moiseev, M.V. Maximov, Light Sci. Appl., 10, 80 (2021). DOI: 10.1038/s41377-021-00525-6
- E.I. Moiseev, N.V. Kryzhanovskaya, F.I. Zubov, M.S. Mikhailovskii, A.N. Abramov, M.V. Maximov, M.M. Kulagina, Yu.A. Guseva, D.A. Lifshits, A.E. Zhukov, Semiconductors, 53 (14), 1888 (2019). DOI: 10.1134/S106378261914015X
- N.V. Kryzhanovskaya, E.I. Moiseev, Yu.V. Kudashova, F.I. Zubov, A.A. Lipovskii, M.M. Kulagina, S.I. Troshkov, Yu.M. Zadiranov, D.A. Lifshits, M.V. Maximov, A.E. Zhukov, Electron. Lett., 51 (17), 1354 (2015). DOI: 10.1049/el.2015.2325
- Y. Wan, D. Inoue, D. Jung, J.C. Norman, C. Shang, A.C. Gossard, J.E. Bowers, Photon. Res., 6 (8), 776 (2018). DOI: 10.1364/PRJ.6.000776
- A. Fiore, M. Rossetti, B. Alloing, C. Paranthoen, J.X. Chen, L. Geelhaar, H. Riechert, Phys. Rev. B, 70 (20), 205311 (2004). DOI: 10.1103/PhysRevB.70.205311
- A.E. Zhukov, N.V. Kryzhanovskaya, E.I. Moiseev, A.S. Dragunova, M. Tang, S. Chen, H. Liu, M.M. Kulagina, S.A. Kadinskaya, F.I. Zubov, A.M. Mozharov, M.V. Maximov, Materials, 13 (10), 2315 (2020). DOI: 10.3390/ma13102315
- A. Marcus, J.X. Chen, C. Paranthoen, A. Fiore, Appl. Phys. Lett., 82 (12), 1818 (2003). DOI: 10.1063/1.1563742
- M.V. Maximov, Yu.M. Shernyakov, F.I. Zubov, A.E. Zhukov, N.Yu. Gordeev, V.V. Korenev, A.V. Savelyev, D.A. Lifshits, Semicond. Sci. Technol., 28 (10), 105016 (2013). DOI: 10.1088/0268-1242/28/10/105016
- M.V. Maximov, N.V. Kryzhanovskaya, A.M. Nadtochiy, E.I. Moiseev, I.I. Shostak, A.A. Bogdanov, Z.F. Sadrieva, A.E. Zhukov, A.A. Lipovskii, D.V. Karpov, J. Laukkanen, J. Tommila, Nanoscale Res. Lett., 9 (1), 3266 (2014). DOI: 10.1186/1556-276X-9-657
- M.V. Maximov, A.M. Nadtochiy, S.A. Mintairov, N.A. Kalyuzhnyy, N.V. Kryzhanovskaya, E.I. Moiseev, N.Yu. Gordeev, Yu.M. Shernyakov, A.S. Payusov, F.I. Zubov, V.N. Nevedomskiy, S.S. Rouvimov, A.E. Zhukov, Appl. Sci., 10 (3), 1038 (2020). DOI: 10.3390/app10031038
- F. Zubov, M. Maximov, E. Moiseev, A. Vorobyev, A. Mozharov, Yu. Berdnikov, N. Kalyuzhnyy, S. Mitairov, M. Kulagina, N. Kryzhanovskaya, A. Zhukov, Opt. Lett., 46 (16), 3853 (2021). DOI: 10.1364/OL.432920
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.