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Plasma-chemical method of silicon carbide modification to obtain particles with controlled surface morphology

Russian version

DOI: 10.21883/TPL.2022.02.53582.19042

Shalygina T. A.^1,2, Rudenko M. S. ¹, Nemtsev I. V. ^2,3,4, Parfenov V. A. ⁵, Voronina S. Yu.¹

¹Siberian State University of Science and Technology, Krasnoyarsk, Russia
²Siberian State University, Krasnoyarsk, Russia
³Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russia
⁴Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
⁵Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Russian Academy of Sciences, Krasnoyarsk, Russia

Email: leonova.ta@inbox.ru

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Abstract
References
Статистика просмотров

A plasma-chemical method for the modification of silicon carbide particles is presented, which makes it possible to obtain particles with a controlled surface morphology. The variable parameter of particle processing was the ratio of the fraction of plasma-forming (Ar) and additional (H) gases. It was shown that at Ar/H = 100/0, the formation of a carbon shell is observed; at Ar/H ratios of 91/9 and 84/16, the particles are characterized by a carbon shell decorated with silicon nanoparticles or nanowires, respectively. The modified particles were analyzed using scanning electron microscopy and Raman spectroscopy. Keywords: silicon carbide, plasma chemistry, surface morphology, nanoparticles, nanowires, carbon shell, core-shell

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