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Investigation of the photoelectric characteristics of GaAs solar cells with different InGaAs quantum dot array positioning in the i-region.
Russian version
DOI: 10.21883/TPL.2022.14.53576.18922
Salii R. A. 1, Mintairov M. A. 1, Mintairov S. A. 1, Nakhimovich M. V.1, Shvarts M. Z. 1, Kalyuzhnyy N. A. 1
1Ioffe Institute, St. Petersburg, Russia
Email: r.saliy@mail.ioffe.ru, Mamint@mail.ioffe.ru, Mintairov@scell.ioffe.ru, NMar@mail.ioffe.ru, shvarts@scell.ioffe.ru, Nickk@mail.ioffe.ru
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The effect of positioning of the In0.8Ga0.2As quantum dots (QDs) array in the i-region of the solar cell (SC) on its photogenerated current and dark saturation currents, which determine the device operating voltage, have been investigated. It was found out that the indicated photoelectric characteristics depend on the location of the QD array relative to the electric field of the p-n junction. The displacement of the QD array to the boundary of the weakly doped base leads to a decrease in the photogenerated current. But at the same time, the voltage drop effect, which is well-known for nanoheterostructural SC, is minimal. Keywords: solar cells, quantum dots, dark saturation current
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