Technical Physics Letters
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- 2023
- 2022
Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates
Pashchenko A. S.
1, Devitsky O.V.
1,2, Lunin L. S.
1, Lunina M. L.
1, Pashchenko O.S.
1
1Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
2North-Caucasian Federal University, Stavropol, Russia
2North-Caucasian Federal University, Stavropol, Russia
Email: as.pashchenko@gmail.com
GaInAsSbBi solid solutions with different Bi contents are synthesized on n-GaSb substrates with a misorientation of 6o between the (100) and (111)A planes. Structural properties and morphology of GaInAsSbBi thin films are studied. Transmission electron microscopy and X-ray diffraction have shown that the films have a polycrystalline structure. It is found that an increase in the Bi concentration in the solid solution leads to a decrease in the average size of the region of coherent scattering by (111) reflection from 20 to 5 nm. It is shown that in films with a lower content of Bi, the thickness of the transition amorphous layer at the ?layer-substrate? heterointerface decreases. Keywords: solid solutions, GaInAsSbBi, GaSb, III-V compounds.
- H. Sugiyama, K. Uchida, X. Han, G.K. Periyanayagam, M. Aikawa, N. Hayasaka, K. Shimomura, J. Cryst. Growth, 507, 93 (2019). DOI: 10.1016/j.jcrysgro.2018.10.024
- F.I. Zubov, M.E. Muretova, L.V. Asryan, E.S. Semenova, M.V. Maximov, A.E. Zhukov, J. Appl. Phys., 124, 133105 (2018). DOI: 10.1063/1.5039442
- S. Ilahi, N. Yacoubi, F. Genty, Opt. Mater., 69, 226 (2017). DOI: 10.1016/j.optmat.2017.04.050
- N. An, L. Ma, G. Wen, Z. Liang, H. Zhang, T. Gao, C. Fan, Appl. Sci., 9, 162 (2019). DOI: 10.3390/app9010162
- R.A. Carrasco, C.P. Morath, J.V. Logan, K.B. Woller, P.C. Grant, H. Orozco, M.S. Milosavljevic, S.R. Johnson, G. Balakrishnan, P.T. Webster, Appl. Phys. Lett., 120, 031102 (2022). DOI: 10.1063/5.0078809
- L. Wang, L. Zhang, L. Yue, D. Liang, X. Chen, Y. Li, P. Lu, J. Shao, S. Wang, Crystals, 7, 63 (2017). DOI: 10.3390/cryst7030063
- C.A. Wang, C.J. Vineis, D.R. Calawa, MRS Proc., 794, T9.6 (2003). DOI: 10.1557/PROC-794-T9.6
- H.-W. Cheng, Sh.-Ch. Lin, Z.-L. Li, K.-W. Sun, Ch.-P. Lee, Materials, 12, 317 (2019). DOI: 10.3390/ma12020317
- Y.L. Casallas-Moreno, G. Villa-Marti nez, M. Rami rez-Lopez, P. Rodri guez-Fragoso, M.L. Gomez-Herrera, M. Perez-Gonzalez, A. Escobosa-Echavarri a, S.A. Tomas, J.L. Herrera-Perez, J.G. Mendoza-Alvarez, J. Alloys Compd., 808, 151690 (2019). DOI: 10.1016/j.jallcom.2019.151690
- L.A. Sokura, Ya.A. Parkhomenko, K.D. Moiseev, V.N. Nevedomsky, N.A. Bert, Semiconductors, 51, 1101 (2017). DOI: 10.1134/S1063782617080310
- A.S. Pashchenko, O.V. Devitsky, L.S. Lunin, I.V. Kasyanov, D.A. Nikulin, O.S. Pashchenko, Thin Solid Films, 743, 139064 (2022). DOI: 10.1016/j.tsf.2021.139064
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