Luminance and efficiency of a light-emitting diode with transport-blocking poly(methyl methacrylate) layers and quantum dots: theoretical model, experiment, optimization
Saunina A. Yu. 1, Tkach A. A.1, Alexandrov A. E.1,2, Lypenko D. A.1,2, Nikitenko V. R.1, Nabiev I. R.1,3, Samokhvalov P. S.1
1National Research Nuclear University “MEPhI”, Moscow, Russia
2Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, Moscow, Russia
3Laboratoire de Recherche en Nanosciences, Universite de Reims Champagne-Ardenne, Reims, France
Email: ayus03@mail.ru

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The results of studies of the influence of the thicknesses of the electron-blocking, hole-conducting and recombination layers on the luminance-voltage and other electrophysical characteristics of a multilayer light-emitting diode with an active layer based on semiconductor quantum dots are presented. Optimized thicknesses and voltages are determined to achieve the maximum efficiency of electroluminescence of the light-emitting diode. Keywords: quantum dots, light-emitting diode, blocking layer.
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