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Degradation of InGaN/GaN quantum well UV LEDs caused by short-term exposure to current
Russian version
DOI: 10.21883/TP.2022.02.52953.229-21
Ivanov A. M.1, Klochkov A. V.1
1Ioffe Institute, St. Petersburg, Russia
Email: alexandr.ivanov@mail.ioffe.ru, alex.klo@mail.ioffe.ru
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A comparative analysis of the initial stages of degradation of ultraviolet and blue LED structures with InGaN/GaN quantum wells is carried out. In the mode of accelerated aging, the structures were subjected to short-term, sequential exposure to currents of 80-190 mA at forward bias. The exposure time did not exceed three hours. There was an increase (up to 20%) in the external quantum efficiency. The most probable physical mechanisms explaining the changes in InGaN/GaN LEDs are presented and possible ways to slow down the aging of UV LEDs are outlined. Keywords: Degradation of ultraviolet light-emitting diodes, increase in quantum efficiency, slowing down the aging.
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