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Investigation of the effect of hydrogen content on the conductivity of nanocrystalline diamond films
Russian version
DOI: 10.21883/TPL.2022.01.52477.18923
Ivanov O. A. 1, Vikharev A. L. 1, Bogdanov S. A. 1, Ovechkin N. M. 1, Loginov V. P.2, Yakovlev Y. A. 2, Vul` A. Ya. 3
1Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
Email: ioleg@ipfran.ru, val@ipfran.ru, bogser@ipfran.ru, yura.yakovlev@gmail.com, AlexanderVul@mail.ioffe.ru
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The results are presented for investigation of electrical conductivity of nanocrystalline diamond (NCD) films with thickness of 0.5-0.6 microns grown on silicon Si(100) substrates by the CVD method using methane-hydrogen and methane-hydrogen-oxygen mixtures. By the method of heating in vacuum with using hydrogen analyzer AB-1, the concentration of hydrogen in the studied films was determined and the relationship between the content of hydrogen in the NCD film and its conductivity was estimated. It has been shown that high-temperature processing in vacuum at the temperature of 600oC leads to desorption of hydrogen from the films and to a significant increase in their resistance. Keywords: nanocrystalline diamond, thin diamond films, electrical properties of films, hydrogen content.
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