Technical Physics Letters
Volumes and Issues
Home » Technical Physics Letters » Year 2022, issue 1 » Article p. 53
<<<>>>
Amorphization of silicon nanowires upon irradiation with argon ions
Russian version
DOI: 10.21883/TPL.2022.01.52470.18989
Kononina A. V. 1, Balakshin Yu. V. 1,2, Gonchar K.A. 1, Bozhev I.V. 1,3, Shemukhin A.A. 1,2, Chernysh V.S. 1,2
1Lomonosov Moscow State University, Moscow, Russia
2Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
3Quantum technologies centre M. V. Lomonosov Moscow State University, Moscow, Russia
Email: anastasiia.kozhemyako@mail.ru
PDF
The irradiation of silicon nanowires with Ar+ ions with the energy of 250 keV and fluences of 1013 to 1016 cm-2 was carried out. The dependence of the destruction of the structure under ion irradiation on the fluence was investigated by Raman spectroscopy. It was shown that the amorphization of porous silicon occurs at higher values of displacement per atom than in thin silicon films. Keywords: silicon nanowires, Raman spectroscopy, defect formation.
  1. R. Smerdov, Yu. Spivak, I. Bizyaev, P. Somov, V. Gerasimov, A. Mustafaev, V. Moshnikov, Electronics, 10 (1), 42 (2021). DOI: 10.3390/electronics10010042
  2. R. Castro, Y. Spivak, S. Shevchenko, V. Moshnikov, Materials, 14 (10), 2471 (2021). DOI: 10.3390/ma14102471
  3. M.B. Gongalsky, U.A. Tsurikova, J.V. Samsonova, G.Z. Gvindzhiliiia, K.A. Gonchar, N.Yu. Saushkin, A.A. Kudryavtsev, E.A. Kropotkina, A.S. Gambaryan, L.A. Osminkina, Results Mater. 6, 100084 (2020). DOI: 10.1016/j.rinma.2020.100084
  4. N. Chartuprayoon, M. Zhang, W. Bosze, Y.-H. Choa, N.V. Myung, Biosens. Bioelectron., 63, 432 (2015). DOI: 10.1016/j.bios.2014.07.043
  5. A.V. Pavlikov, O.V. Rakhimova, P.K. Kashkarov, Moscow Univ. Phys. Bull., 73 (2), 199 (2018). DOI: 10.3103/S0027134918020121
  6. S. Aziza, A. Ripp, D. Horvitz, Y. Rosenwaks, Mater. Sci. Semicond. Process., 75, 43 (2018). DOI: 10.1016/j.mssp.2017.11.001
  7. V.S. Vendamani, D. Kanjilal, S. Venugopal Rao, Chem. Phys., 548, 111242 (2021). DOI: 10.1016/j.chemphys.2021.111242
  8. S. Hoffmann, J. Bauer, C. Ronning, Th. Stelzner, J. Michler, C. Ballif, V. Sivakov, S.H. Christiansen, Nano Lett, 9 (4), 1341 (2009). DOI: 10.1021/nl802977m
  9. M.G. Shahraki, Z. Zeinali, J. Phys. Chem. Solids, 85, 233 (2015). DOI: 10.1016/j.jpcs.2015.06.001
  10. A.A. Shemukhin, Yu.V. Balakshin, V.S. Chernysh, A.S. Patrakeev, S.A. Golubkov, N.N. Egorov, A.I. Sidorov, B.A. Malyukov, V.N. Statsenko, V.D. Chumak, Tech. Phys. Lett., 38 (10), 907 (2012). DOI: 10.1134/S1063785012100112
  11. A.P. Evseev, A.V. Kozhemiako, Yu.V. Kargina, Yu.V. Balakshin, E.A. Zvereva, V.S. Chernysh, M.B. Gongalsky, A.A. Shemukhin, Rad. Phys. Chem., 176, 109061 (2020). DOI: 10.1016/j.radphyschem.2020.109061
  12. S.D. Trofimov, S.A. Tarelkin, S.V. Bolshedvorskii, V.S. Bormashov, S.Yu. Troshchiev, A.V. Golovanov, N.V. Luparev, D.D. Prikhodko, K.N. Boldyrev, S.A. Terentiev, A.V. Akimov, N.I. Kargin, N.S. Kukin, A.S. Gusev, A.A. Shemukhin, Yu.V. Balakshin, S.G. Buga, V.D. Blank, Opt. Mater. Express, 10 (1), 198 (2020). DOI: 10.1364/OME.10.000198
  13. Y.M. Spivak, A.Y. Gagarina, M.O. Portnova, A.V. Zaikina, V.A. Moshnikov, J. Phys.: Conf. Ser., 1697, 012126 (2020). DOI: 10.1088/1742-6596/1697/1/012126
  14. Yu.M. Spivak, S.V. Myakin, V.A. Moshnikov, M.F. Panov, A.O. Belorus, A.A. Bobkov, J. Nanomater., 2016, 2629582 (2016). DOI: 10.1155/2016/2629582
  15. Yu.V. Balakshin, A.A. Shemukhin, A.V. Nazarov, A.V. Kozhemiako, V.S. Chernysh, Tech. Phys., 63 (12), 1861 (2018). DOI: 10.1134/S106378421812023X
  16. Z. Sui, P.P. Leong, I.P. Herman, G.S. Higashi, H. Temkin, Appl. Phys. Lett., 60 (17), 2086 (1992). DOI: 10.1063/1.107097
  17. D. Bermejo, M. Cardona, J. Non-Cryst. Solids, 32 (1-3), 405 (1979). DOI: 10.1016/0022-3093(79)90085-1
  18. N.E. Maslova, A.A. Antonovsky, D.M. Zhigunov, V.Y. Timoshenko, V.N. Glebov, V.N. Seminogov, Semiconductors, 44 (8), 1040 (2010). DOI: 10.1134/S1063782610080154
  19. R.K. Biswas, P. Khan, S. Mukherjee, A.K. Mukhopadhyay, J. Ghosh, K. Muraleedharan, J. Non-Cryst. Solids, 488, 1 (2018). DOI: 10.1016/j.jnoncrysol.2018.02.037
  20. K.V. Karabeshkin, P.A. Karaseov, A.I. Titov, Semiconductors, 47 (2), 242 (2013). DOI: 10.1134/S1063782613020115
  21. Yu.V. Balakshin, A.V. Kozhemiako, A.P. Evseev, D.K. Minnebaev, E.M. Elsehly, Moscow Univ. Phys. Bull., 75 (3), 218 (2020). DOI: 10.3103/S0027134920030030
  22. A.V. Kozhemiako, A.P. Evseev, Yu.V. Balakshin, A.A. Shemukhin, Semiconductors, 53 (6), 800 (2019). DOI: 10.1134/S1063782619060095
  23. A. Colli, A. Fasoli, C. Ronning, S. Pisana, S. Piscanec, A.C. Ferrari, Nano Lett., 8 (8), 2188 (2008). DOI: 10.1021/nl080610d

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru