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Resistive Switching in Individual Ferromagnetic Filaments in ZrO₂(Y)/Ni Based Memristive Stacks

Russian version

DOI: 10.21883/TP.2022.13.52220.105-21

Antonov D. A.¹, Filatov D. O. ¹, Novikov A. S.¹, Kruglov A. V.¹, Antonov I. N. ¹, Zdoroveyschev A. V.², Gorshkov O. N.¹

¹Lobachevsky State University, Nizhny Novgorod, Russia
²Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia

Email: antonov@phys.unn.ru, dmitry_filatov@inbox.ru, antonov.dmitr@inbox.ru

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Abstract
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The resistive switching effect in individual ferromagnetic filaments in memristive stacks based on ZrO₂(Y)/Ni functional layers was studied experimentally. A conductive probe of an atomic force microscope played a role of a movable top electrode of a virtual memristive stack. The features of bipolar-type resistive switching found were related to the rapture and restoring of the filaments containing Ni atoms in the ZrO₂(Y) dielectric films and are probably caused by different degree of metallization of the filaments. The filaments fromed were manifested in the images obtained by magnetic force microscopy as single-domain ferromagnetic particles. Keywords: memristor, resistive switching, atomic force microscopy, ferromagnetic filaments.

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