Features of photoelectric characteristics of CdS:Fe samples obtained using various techniques
Kharitonova P.G. 1, Stetsyura S.V. 1
1Saratov State University, Saratov, Russia
Email: haritonovapg@gmail.com, stetsyurasv@mail.ru

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In this paper, we investigate heterophase CdS:Fe film samples obtained by thermal evaporation in vacuum and by a hybrid technique using the Langmuir-Blodgett technology. We conducted a comparative analysis of the photoelectric characteristics of the obtained samples, which showed significant differences in the nature of the change in dark currents and photocurrents when using the specified methods for obtaining samples. The observed differences in the values of the dark current and photocurrent, photosensitivity and photocurrent changes over time are explained by the different arrangement of the layers that are the source of Fe during diffusion, and, as a result, the different arrangement of the heterophase region with nanoscale FeS inclusions relative to the illuminated surface of the sample. As a result of diffusion and precipitation processes in the first case (Langmuir-Blodgett technology), the largest nanoscale FeS precipitates are formed near the illuminated surface, and in the second case (thermal evaporation in vacuum), they are formed near the substrate. The advantages of a hybrid method of obtained CdS:Fe for synthesis a material with an extended range of properties and high photosensitivity have been revealed. Keywords: iron-doped cadmium sulfide, photoelectric characteristics, thermal evaporation in vacuum, Langmuir-Blodgett layers.
  1. M. Sharma, J. Panigrahi, V.K. Komarala. Nanoscale Adv., 3 (12), 3373 (2021). DOI: 10.1039/d0na00791a
  2. C. Cao, Q. An. Cryst. Eng. Comm., 27 (21), 3404 (2025). DOI: 10.1039/D5CE00244C
  3. M. Hou, Z. Zhou, A. Xu, K. Xiao, J. Li, D. Qin, W. Xu, L. Hou. Nanomaterials, 11 (8), 2071 (2021). DOI: 10.3390/nano11082071
  4. A. Bosio, G. Rosa, N. Romeo. Solar Energy, 175, 31 (2018). DOI: 10.1016/j.solener.2018.01.018
  5. F. Gode, S. Unlu. Mater. Sci. Semicond. Process., 90, 92 (2019). DOI: 10.1016/j.mssp.2018.10.011
  6. A. Ashok, G. Regmi, A. Romero-Nunez, M. Solis-Lopez, S. Velumani, H. Castaneda. J. Mater. Sci.: Mater. Electron., 31 (10), 7499 (2020). DOI: 10.1007/s10854-020-03024-3
  7. F.M. Ahmed, A.M. Muhammed Ali, R.A. Ismail, M.A. Fakhri, E.T. Salim. J. Mater. Sci.: Mater. Electron., 34, 1906 (2023). DOI: 10.1007/s10854-023-11380-z
  8. M.A.K.L. Dissanayake, K. Paramanathan, G.K.R. Senadeera, C.A. Thotawattage, K. Balashangar, P. Ravirajan, B.S. Dassanayake. Thin Solid Films, 791, 140225 (2024). DOI: 10.1016/j.tsf.2024.140225
  9. K.A. Aloueedat, N.M. Ahmed, M.R.B. Omer, K. Daoudi, M.A. Almessiere. Optik, 300, 171657 (2024). DOI: 10.1016/j.ijleo.2024.171657
  10. S.M. Pawar, B.S. Pawar, J.H. Kim, Oh-Shim Joo, C.D. Lokhande. Current Appl. Phys., 11 (2), 117 (2011). DOI: 10.1016/j.cap.2010.07.007
  11. M. Shabana, M. Mustafaa, A.M. El Sayed. Mater. Sci. Semicond. Process., 56, 329 (2016). DOI: 10.1016/j.mssp.2016.09.006
  12. R.C. Ruiz-Ortega, L.A. Esquivel-Mendez, M.A. Gonzalez-Trujillo, C. Hernandez-Vasquez, Y. Matsumoto, M.D.L. Albor Aguilera. ACS Omega, 8 (35), 31725 (2023). DOI: 10.1021/acsomega.3c02158
  13. C. Doroody, K.S. Rahman, H.N. Rosly, M.N. Harif, M. Isah, Y.B. Kar, S.K. Tiong, N. Amin. Mater. Sci. Semicond. Process., 133, 105935 (2021). DOI: 10.1016/j.mssp.2021.105935
  14. Z. Pan, S. Wang, R. Yan, C. Song, Y. Jin, G. Huang, J. Huang. Opt. Mater., 109, 110324 (2020). DOI: 10.1016/j.optmat.2020.110324
  15. S. Yi lmaz, M. Tomakin, A. Unverdi, A. Aydi n, I. Polat, E. Bacaksi z. J. Mater. Sci.: Mater. Electron., 31 (15), 12932 (2020). DOI: 10.1007/s10854-020-03846-1
  16. S. Chandramohan, A. Kanjilal, S.N. Sarangi, S. Majumder, R. Sathyamoorthy, T. Som. Appl. Phys. A, 99, 837 (2010). DOI: 10.1007/s00339-010-5598-z
  17. T.S. Volkov, E.M. Gavrishchyk, A.M. Kut'in, D.V. Savin, A.V. Nezhdanov, A.S. Markelov, A.I. Mashin, S.V. Kurashkin. Phys. B: Condensed Matter, 688, 416140 (2024). DOI: 10.1016/j.physb.2024.416140
  18. T. Tohidi, N. Yousefpour Novini, K. Jamshidi-Ghaleh. Opt. Mater., 151, 115394 (2024). DOI: 10.1016/j.optmat.2024.115394
  19. Y. Li, S. Chen, K. Zhang, S. Gu, J. Cao, Y. Xia, C. Yang, W. Sun, Z. Zhou. New J. Chem., 44 (34), 1144 (2020). DOI: 10.1039/D0NJ01424A
  20. K. Kaur, G.S. Lotey, N.K. Verma. J. Mater. Sci.: Mater. Electron., 25 (6), 2605 (2014). DOI: 10.1007/s10854-014-1918-y
  21. S.V. Stetsyura, P.G. Kharitonova, I.V. Malyar. Appl. Phys., 5, 66 (2020)
  22. S.V. Stetsyura, P.G. Kharitonova. St. Petersburg State Polytechnical Univer. J. Phys. Mathem., 16 (1.2), 236 (2023). DOI: 10.18721/JPM.161.236
  23. A. Bukhtiar, B. Zou. Mater. Adv., 5 (17), 6739 (2024). DOI: 10.1039/D4MA00523F
  24. R. Khan, I. Shigidi, S. Al Otaibi, K. Althubeiti, S.S. Abdullaev, N. Rahman, Mohammad sohail, A. Khan, S. Iqbal, T. Del Rosso, Q. Zaman A. Khan. RSC Adv., 12 (55), 36126 (2022). DOI: 10.1039/D2RA06637H
  25. N. Badera, B. Godbole, S.B. Srivastava, P.N. Vishwakarma, L.S. Sharath Chandra, D. Jain, M. Gangrade, T. Shripathi, V.G. Sathe, V. Ganesan. Appl. Surf. Sci., 254 (21), 7042 (2008). DOI: 10.1016/j.apsusc.2008.05.218
  26. P.G. Kharitonova, E.G. Glukhovskoy, A.V. Kozlowski, S.V. Stetsyura, Semiconductors, 57 (7), 510 (2023). DOI: 10.61011/SC.2023.07.57411.4912C
  27. S.V. Stetsyura, P.G. Kharitonova, A.M. Zakharevich. Tech. Phys., 70 (5), 881 (2025). DOI: 10.61011/TP.2025.05.61125.471-24
  28. S.V. Stetsyura, P.G. Kharitonova, E.G. Glukhovskoy. St. Petersburg State Polytechnical Univer. J. Phys. Mathem., 15 (3.3), 250 (2022). DOI: 10.18721/JPM.153.349
  29. Z.I. Kiryashkina, A.G. Rokah, N.B. Katz, V.P. Malkov, E.A. Novikova, N.M. Tsukerman. Fotoprovodyaschiye plenki (tipa CdS) (Saratov University, Saratov, 1979) (in Russian)
  30. G. Hass, R.E. Tun. Fizika tonkykh plenok (Mir, M., 1968), v. 3, p. 332 (in Russian)
  31. A.I. Yanklovich. V sbor. Uspekhi colloidnoy chemii, ed. by A.I. Rusanova (Khimiya, L., 1991) (in Russian)
  32. M. Shkir, T. Alshahrani. J. Phys. Chem. Solids, 177, 111282 (2023). DOI: 10.1016/j.jpcs.2023.111282
  33. B. Tripathi, F. Singh, D.K. Avasthi, A.K. Bhati, D. Das, Y.K. Vijay. J. Alloys Compounds, 454 (1-2), 97 (2008). DOI: 10.1016/j.jallcom.2007.01.016
  34. S.G. Yudin, V.V. Bodnarchuk, V.V. Lazarev, A.I. Smirnova, S.V. Yablonskii. Liquid Crystals and their Application, 19 (4), 50 (2019). DOI: 10.18083/LCAppl.2019.4.50
  35. A.G. Rokakh, S.V. Stetsyura. Inorganic Mater., 33 (2), 153 (1997)
  36. A.G. Rokakh. Pis'ma v ZhTF, 10 (13), 820 (1984) (in Russian)
  37. A.G. Rokakh, S.V. Stetsyura, A.A. Serdobintsev. Izvestiya of Saratov University. Physics, 5 (1), 92 (2005) (in Russian). DOI: 10.18500/1817-3020-2005-5-1-92-102
  38. M.K. Sheinkman, N.E. Korsunskaya. Fotokhimicheskiye reaktsii v poluprovodnikakh tipa A2B6. In book Fyzika soyedineniy A2B6, edited by A.N. Georgobiani, M.K. Sheinkman (Nauka, M., 1986) (in Russian).

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