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Modeling and Experimental Study of AlGaAs/GaAs Structures for Infrared Detector Implementation
Russian version
Dashkov A. S. 1,2, Khakhulin S. A. 1, Kostromin N. A. 1,2, Barykin D. A. 1, Komkov O. S. 1, Pirogov E.V. 2, Sobolev M. S. 2, Goray L. I. 1,2,3,4, Bouravleuv A. D. 1,3,5
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
4Institute of Space Research, Russian Academy of Sciences, Moscow, Russia
5Ioffe Institute, St. Petersburg, Russia
Email: dashkov.alexander.om@gmail.com
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A theoretical and experimental study of AlGaAs/GaAs multiple quantum well structures intended for mid-infrared photodetectors operating at room temperature has been carried out. Based on theoretical estimates, the primary requirements for the composition, layer thicknesses, and doping levels of the investigated structures were formulated. The electronic band structure, experimentally reconstructed using photoreflectance, was employed to refine the computational model implemented using the finite element method. This made it possible to accurately reproduce the band diagram and energy levels, as well as to determine the parameters required for absorption spectrum calculations. Based on these parameters, absorption spectra were calculated for different doping concentrations, demonstrating an enhancement of the absorption peak intensity with increasing doping level. Keywords: infrared radiation detectors, AlGaAs/GaAs structures, quantum-confined heterostructures, quantum wells, intersubband transitions, photoreflectance, band diagram.
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