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As-grown dislocation glide motion in bulk single crystals of AlN: transmission electron microscope study
Myasoedov A. V.
1, Argunova T. S.
1, Gutkin M.Yu.
2,3, Mokhov E. N.
1, Kazarova O. P.1, Nagalyuk S. S.
1
1Ioffe Institute, St. Petersburg, Russia
2Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
3ITMO University, St. Petersburg, Russia
2Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
3ITMO University, St. Petersburg, Russia
Email: amyasoedov88@gmail.com, argunova@mail.ioffe.ru, m.y.gutkin@gmail.com, evgenymokhov@yandex.ru, snagalyuk@gmail.com
AlN single crystals grown by sublimation on SiC substrates have a relatively high density of structural defects. With increasing ingot length, the crystallinity improves and higher quality crystals can be obtained. In this paper, we apply transmission electron microscopy to understand the processes of the reduction of defects. The mechanisms responsible for this reduction have been identified to include dislocation reactions, the formation of low-angle boundaries, and basal dislocation slip. A 2.5 mm thick AlN bulk crystal was grown on a 64 mm diameter SiC substrate using an advanced technology in which a liquid silicon film is present on the growing surface. Keywords: dislocations, AlN bulk single crystal, SiC substrate, transmission electron microscopy.
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