Terahertz generation in a-Si:H/c-Si geterostructures under excitation by femtosecond laser pulses
Andrianov A. V. 1, Terukov E. I. 1,2,3, Abolmasov S. N. 1,3
1Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
3R&D Center of Thin Film Technologies in Energetics under the Ioffe Institute LLC, St. Petersburg, Russia
Email: alex.andrianov@mail.ioffe.ru
The results of studying the generation of terahertz (THz) radiation in a-Si:H/c-Si-based p-n-heterostructures photoexcited by femtosecond laser radiation with wavelengths of 400 and 800 nm are presented. A several-times increase in the differential efficiency of THz generation was observed in switching from long-wave to short-wave pumping. Broadening of the THz radiation amplitude spectrum and increase in its upper limit frequency (at the level of 0.01 from the maximum) to about 2.7 THz were also observed. Keywords: terahertz radiation, heterostructures, femtosecond laser excitation, second harmonic, fast photocurrent.
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