Parameters of sub-gigahertz microwave signal transmission through a nanosecond GaAs-based photoconductive semiconductor switch
Barmin V. V.1, Romanchenko I.V.1
1Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences, Tomsk, Russia
Email: valery@barmin.club
An experimental study of the transmission of a sub-gigahertz microwave signal in traveling wave mode through a photoconductive semiconductor switch in nonlinear amplification mode has been conducted. It was found that the formation of strong field domains in the switch does not significantly exacerbate the transmitted kilowatt microwave signal (~ 172 MHz) when absorbed in a matched and short-circuited load with a decrease in the amplitude of the microwave signal from 733 to 598 V and from 463 to 342.5 V, respectively. The use of a 42 mΩ short-circuit load leads to signal distortion, but it allows you to get a signal with a transition through zero. The results obtained demonstrate the possibility of using a photoconductive semiconductor switch for high-power pulsed microwave devices at high frequencies. Keywords: PCSS, GaAs, Microwave, CFD.
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