AlGaAs subcells for hybrid A3B5//Si solar cells
Mintairov S.A. 1, Emelyanov V.M.1, Kalyuzhnyy N.A.1, Nakhimovich M.V.1, Salii R.A.1, Shvarts M.Z.1
1Ioffe Institute, St. Petersburg, Russia
Email: mintairov@scell.ioffe.ru
The values of diffusion lengths of minority charge carriers in AlxGa1-xAs (AlGaAs) layers with aluminum concentrations x from 0 to 0.2 were determined. For this the spectra of quantum yield for single-junction solar cells with photoactive layers based on AlGaAs have been approximated. The calculations of the external quantum efficiency spectra for GaInP, AlGaAs and Si subcells of hybrid GaInP/AlGaAs//Si solar cells (SC) for space applications are performed. It is shown that GaInP/AlGaAs//Si SCs provide an efficiency of 33.5 % (1 sun, AM0) with complete carriers collection from the base layer of the AlGaAs subcell and an aluminum concentration of x=0.1, 33 % (1 sun, AM0) when using a gradient composition in the base layer and an average aluminum concentration of x=0.08 and 32.8 % (1 sun, AM0) when using a constant aluminum concentration of x=0.08. Keywords: hybrid solar cells, subcell, MOVPE, efficiency, quantum efficiency, mathematical modeling.
- L. Greco, UCS Satellite Database [Electronic source]. https://www.ucsusa.org/resources/satellite-database
- R. Verduci, V. Romano, G. Brunetti, N.Y. Nia, A. Di Carlo, G. D'Angelo, C. Ciminell, Adv. Energy Mater., 12, 2200125 (2022). DOI: 10.1002/aenm.202200125
- M. Kaltenbrunner, G. Adam, E.D. G owacki, M. Drack, R. Schwodiauer, L. Leonat, D.H. Apaydin, H. Groiss, M.C. Scharber, M.S. White, N.S. Sariciftci, S. Bauer, Nat. Mater., 14, 1032 (2015). DOI: 10.1038/nmat4388
- F. Lang, M. Jovst, K. Frohna, E. Kohnen, A. Al-Ashouri, A.R. Bowman, T. Bertram, A.B. Morales-Vilches, D. Koushik, E.M. Tennyson, K. Galkowski, G. Landi, M. Creatore, B. Stannowski, C.A. Kaufmann, J. Bundesmann, J. Rappich, B. Rech, A. Denker, S. Albrecht, H.C. Neitzert, N.H. Nickel, S.D. Stranks, Joule, 4, 1054 (2020). DOI: 10.1016/j.joule.2020.03.006
- D. Cardwell, A. Kirk, C. Stender, A. Wibowo, F. Tuminello, M. Drees, R. Chan, M. Osowski, N. Pan, in 2017 IEEE 44th Photovoltaic Specialists Conf. (PVSC) (IEEE, 2017), p. 3511. DOI: 10.1109/PVSC.2017.8366552
- J. Li, A. Aierken, Y. Liu, Y. Zhuang, X. Yang, J.H. Mo, R.K. Fan, Q.Y. Chen, S.Y. Zhang, Y.M. Huang, Q. Zhang, Front. Phys., 8, 631925 (2021). DOI: 10.3389/fphy.2020.631925
- P. Schygulla, R. Muller, D. Lackner, O. Hohn, H. Hauser, B. Blasi, F. Predan, J. Benick, M. Hermle, S. Glunz, F. Dimroth, Prog. Photovolt.: Res. Appl., 30, 869 (2022). DOI: 0.1002/pip.3503
- P. Schygulla, R. Muller, O. Hohn, M. Schachtner, D. Chojniak, A. Cordaro, S. Tabernig, B. Blasi, A. Polman, G. Siefer, D. Lackner, F. Dimroth, Prog. Photovolt.: Res. Appl., 33 (1), 100 (2025). DOI: 10.1002/pip.3769
- S.A. Mintairov, V.M. Emelyanov, N.A. Kalyuzhnyy, M.V. Nakhimovich, V.V. Oleynik, R.A. Salii, A.F. Skachkov, L.N. Skachkova, M.Z. Shvarts, Tech. Phys. Lett., 51 (7), 37 (2025). DOI: 10.61011/TPL.2025.07.61428.20295
- S.A. Mintairov, V.M. Andreev, V.M. Emelyanov, N.A. Kalyuzhnyy, N.K. Timoshina, M.Z. Shvarts, V.M. Lantratov, Semiconductors, 44 (8), 1084 (2010). DOI: 10.1134/S1063782610080233.