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Radiation tolerance of ATR sensors based on p-InAsSbP/n-InAs double heterostructures irradiated by gamma-rays
Russian version
S. A. Karandashev1, A. A. Klimov1, R.E. Kunkov1, V.N. Lomasov2, T. S. Lukhmyrina1, B. A. Matveev1, M. A. Remennyi1, E.I. Shabunina1, N.M. Shmidt1
1Ioffe Institute, St. Petersburg, Russia
2Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: bmat@iropt3.ioffe.ru
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Radiation tolerance tests of multiply attenuated total reflection sensors and their optoelectronic components (light-emitting diodes and photodiodes) based on p-InAsSbP/n-InAs double heterostructures have shown that their main parameters are stable to exposure to gamma radiation at small irradiation doses (≤0.1 MGy, 60Co), while at the irradiation doses from ~0.2 to ~2 MGy we have detected an increase of a dark current and sensor noises with simultaneous reduction of a photodiode photocurrent as well as found a process of partial restoration of these parameters after exposure at 300 K. An analysis of the dependence of the spectral density of low-frequency current noise on the perimeter and area of p-n junctions allowed us to conclude that the determining contribution is made by radiation defects formed at the periphery of mesa diodes during their irradiation with high doses(~2 MGy). Keywords: InAs, light-emitting diodes, photodiodes, optopairs, mid-IR range, radiation tolerance, surface, radiation defects.
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