Physics of the Solid State
Volumes and Issues
Geometry of InSb quantum dots grown on a surface of the In(As,Sb) matrix layer
Parkhomenko Ya. A.1, Dement'ev P. A.1, Moiseev K. D. 1
1Ioffe Institute, St. Petersburg, Russia
Email: mkd@iropt2.ioffe.ru

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Arrays of InSb quantum dots were obtained on matrix layers of solid solutions in the InAs-InSb system by liquid-phase epitaxy. The effect of an additional element introduced into the crystal lattice of the matrix layer on the surface density, geometric parameters and structural properties of the grown nanoheterostructures was shown. The presence of a common element in the InAs1-ySby matrix layer and InSb nanoislands made it possible to increase the surface density of quantum dots to 1.8·1010 cm-2. A transformation of the shape of nanoislands (from a convex lens to a truncated pyramid) was observed depending on the matrix layer in the composition range 0<y<0.09. A model of the shape of self-organizing InSb quantum dots deposited on the surface of a ternary solid solution in the InAs-InSb system was proposed. Keywords: Quantum dots, solid solutions, InAs, InSb, atomic force microscopy, nanoheterostructures.
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