Physics of the Solid State
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Nano-electromagnets based on hybrid SiC/Si nanostructures
Bagraev N. T.1, Klyachkin L. E.1, Malyarenko A. M.1, Osipov A. V.
2, Kukushkin S. A.
2
1Ioffe Institute, St. Petersburg, Russia
2Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
2Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
Email: andrey.v.osipov@gmail.com, sergey.a.kukushkin@gmail.com
Possible ways of obtaining electromagnets using electromagnetic induction on the surface of silicon carbide nanostructures containing silicon vacancies and grown on the surface of monocrystalline silicon by the method of coordinated atomic substitution are considered. The electrical characteristics of boron structures made within the framework of the Hall geometry are investigated, depending on the magnitude of the longitudinal source-drain current, during the transmission of which a magnetic field perpendicular to the plane of the structure is induced. This field determines the characteristics of non-dissipative transport of single carriers in the edge channels of the nanostructure, which are analyzed using the results of conductivity measurements depending on the magnitude of the magnetic current through the area of the edge channel. Keywords: nanomagnets, magnetic susceptibility, silicon carbide on silicon, silicon vacancies, nanostructures.
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