Surface lasing in micropillar cavity lasers
Babichev A. V. 1, Makhov I. S. 2, Kryzhanovskaya N. V. 2, Zadiranov Yu. M.1, Salii Yu. A.1, Kulagina M. M.1, Kovach Ya. N.1,3, Bobrov M. A. 1, Vasiliev A. P.1, Blokhin S. A. 1, Maleev N. A. 1, Karachinsky L. Ya. 3, Novikov I. I. 3, Egorov A. Yu. 3
1Ioffe Institute, St. Petersburg, Russia
2HSE University, St. Petersburg, Russia
3ITMO University, St. Petersburg, Russia

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Lasing in vertical micropillar cavity lasers at a temperature of 244 K was demonstrated. The threshold absorbed optical power, lasing wavelength and quality factor of a 4 μm diameter micropillar laser were ~2.8 mW, 989 nm and 12000. The minimum threshold absorbed optical power (250 μW) corresponds to a temperature of 168 K. Keywords: microlasers, vertical microcavity, quantum dots, Stranski-Krastanov mechanism, optical reservoir computing.
  1. C. Mead, Proc. IEEE, 78 (10), 1629 (1990). DOI: 10.1109/5.58356
  2. T. Heuser, J. Grose, S. Holzinger, M.M. Sommer, S. Reitzenstein, IEEE J. Sel. Top. Quantum Electron., 26 (1), 1900109 (2020). DOI: 10.1109/jstqe.2019.2925968
  3. K. Vandoorne, W. Dierckx, B. Schrauwen, D. Verstraeten, R. Baets, P. Bienstman, J. Van Campenhout, Opt. Express, 16 (15), 11182 (2008). DOI: 10.1364/oe.16.011182
  4. L. Larger, M.C. Soriano, D. Brunner, L. Appeltant, J.M. Gutierrez, L. Pesquera, C.R. Mirasso, I. Fischer, Opt. Express, 20 (3), 3241 (2012). DOI: 10.1364/OE.20.003241
  5. J. Bueno, S. Maktoobi, L. Froehly, I. Fischer, M. Jacquot, L. Larger, D. Brunner, Optica, 5 (6), 756 (2018). DOI: 10.1364/OPTICA.5.000756
  6. M.S. Kulkarni, C. Teuscher, in 2012 IEEE/ACM Int. Symp. on nanoscale architectures (NANOARCH) (IEEE, 2012), p. 226. DOI: 10.1145/2765491.2765531
  7. F. Duport, B. Schneider, A. Smerieri, M. Haelterman, S. Massar, Opt. Express, 20 (20), 22783 (2012). DOI: 10.1364/OE.20.022783
  8. D. Brunner, I. Fischer, Opt. Lett., 40 (16), 3854 (2015). DOI: 10.1364/ol.40.003854
  9. M. Pfluger, D. Brunner, T. Heuser, J.A. Lott, S. Reitzenstein, I. Fischer, Opt. Lett., 49 (9), 2285 (2024). DOI: 10.1364/ol.518946
  10. A. Babichev, I. Makhov, N. Kryzhanovskaya, A. Blokhin, Y. Zadiranov, Y. Salii, M. Kulagina, M. Bobrov, A. Vasil'ev, S. Blokhin, N. Maleev, M. Tchernycheva, L. Karachinsky, I. Novikov, A. Egorov, IEEE J. Sel. Top. Quantum Electron., 31 (5), 1900208 (2025). DOI: 10.1109/jstqe.2024.3494245
  11. C.-W. Shih, I. Limame, S. Kruger, C.C. Palekar, A. Koulas-Simos, D. Brunner, S. Reitzenstein, Appl. Phys. Lett., 122 (15), 151111 (2023). DOI: 10.1063/5.0143236
  12. G. Bjork, Y. Yamamoto, IEEE J. Quantum Electron., 27 (11), 2386 (1991). DOI: 10.1109/3.100877
  13. A. Babichev, I. Makhov, N. Kryzhanovskaya, S. Troshkov, Y. Zadiranov, Y. Salii, M. Kulagina, M. Bobrov, A. Vasil'ev, S. Blokhin, N. Maleev, L. Karachinsky, I. Novikov, A. Egorov, IEEE J. Sel. Top. Quantum Electron., 31 (2), 1502808 (2025). DOI: 10.1109/jstqe.2024.3503724
  14. A.V. Babichev, E.V. Nikitina, L.Ya. Karachinsky, I.I. Novikov, A.Yu. Egorov, in 2024 Int. Conf. on electrical engineering and photonics (EExPolytech) (IEEE, 2024), p. 266. DOI: 10.1109/EExPolytech62224.2024.10755847
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