The α-Cr2O3 layers grown on (100) β-Ga2O3 substrates by ultrasonic vapor chemical epitaxy (mist-CVD)
Nikolaev V. I.1, Timashov R. B.1, Stepanov A. I.1, Chikiryaka A. V.1, Scheglov M. P.1, Shapenkov S. V.1, Krymov V. M.1
1Ioffe Institute, St. Petersburg, Russia
Email: chikiryaka@mail.ru

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Heterocontacts based on α-Cr2O3/β-Ga2O3 have recently attracted interest, as they enable realizing in device structures the potentials of such an ultra-wide-bandgap semiconductor as gallium oxide; the matter is that it is yet impossible to obtain gallium oxide samples of the p-type conductivity with the parameters suitable for instrumental applications, while this is quite achievable for α-Cr2O3. In this work, epitaxial chromium oxide layers on bulk gallium oxide substrates up to 1 μm and more thick were obtained by the CVD method for the first time. The question of orientation of these layers was considered. X-ray diffraction has revealed that the α-Cr2O3 layers grown on (100) β-Ga2O3 wafers exhibit a single layer reflex corresponding to (11 26). Keywords: gallium oxide, chromium oxide, mist-CVD epitaxy, heterostructures, multilayer films.
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