Technical Physics Letters
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The influence of mechanical tensile deformation on the magnetoresistance of magnetic straintronics nanostructures
Zhukov D. A.
1, Polyakov O. P.
2, Polyakov P. A.
2, Amelichev V. V.
1, Kasatkin S. I.
3, Kostyuk D. V.
1
1Scientific-Manufacturing Complex «Technological Centre», Zelenograd, Moscow, Russia
2Lomonosov Moscow State University, Moscow, Russia
3Trapeznikov Institute of Control Sciences, Russian Academy of Sciences, Moscow, Russia
2Lomonosov Moscow State University, Moscow, Russia
3Trapeznikov Institute of Control Sciences, Russian Academy of Sciences, Moscow, Russia
Email: D.Zhukov@tcen.ru, o_polyakov@physics.msu.ru, polyakovpa@mail.ru, V.Amelichev@tcen.ru, kasatkin14@mail.ru, D.Kostyuk@tcen.ru
The results of experimental and theoretical studies of magnetic straintronics nanostructure Ta (5 nm)/FeNiCo (20 nm)/CoFe (10 nm)/Ta (5 nm) are presented. The magnetoresistance dependence on external magnetic field strength under the mechanical tensile deformation is determined. A theoretical model explaining the features of this experimental dependence is proposed. In particular, the experimentally established asymmetry of magnetoresistance variations under the compressive and tensile deformations is explained. Keywords: magnetic straintronics, magnetoresistive effect, theory of micromagnetism, magnetoresistive nanostructure.
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