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Study of the low-order mode field structure impact on Y-splitter parameters in photonic integrated circuits
Volkov P.V.
1, Vyazankin O.S.1, Bobrov A.I.
2, Nezhdanov A.V.
2, Semikov D.A.
1, Sidorenko K.V.
2
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
Email: volkov@ipmras.ru, vyazankin.os@ipmras.ru, bobrov@phys.unn.ru, nezhdanov@phys.unn.ru, semikovda@ipmras.ru, sidorenko@nifti.unn.ru
The impact of low-order mode operation in silicon integrated waveguides on the performance of Y-splitters with a rib geometry, fabricated on a silicon-on-insulator (SOI) platform, is investigated. It is demonstrated that the TE10 mode, emerging when a standard 500x 220 nm channel silicon waveguide is overgrown with silicon oxide, significantly alters the Y-splitter characteristics. As a result, the splitting ratio becomes dependent on the relative alignment between the optical fiber delivering light to the photonic integrated circuit and the input coupling structure. Keywords: rib waveguides, channel waveguides, integrated splitters.
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