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Studies of structural and electronic properties of InP layers formed by plasma-enhanced atomic layer deposition on a Si substrate with a GaP sublayer
Russian version
Gudovskikh A. S. 1,2, Baranov A. I. 1, Uvarov A. V. 1, Vyacheslavova E.A. 1, Maksimova A. A. 1,2, Kirilenko D.A.3, Yakovlev G. E.2, Zubkov V. I. 2
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
Email: gudovskikh@spbau.ru
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The structural and electronic properties of InP layers and the GaP/InP interface formed by plasma-enhanced chemical atomic layer deposition on a Si substrate were studied. When InP was grown on a Si substrate with a GaP sublayer (20 nm), a sharp InP/GaP interface was observed and the properties of the GaP/Si interface were preserved. Measurements of the carrier concentration profiles using electrochemical CV profiling for the InP/GaP/Si heterostructure allowed us to estimate Δ EC at the GaP/InP interface as 0.55± 0.05 eV. Keywords: indium phosphide, gallium phosphide, interface, atomic layer deposition.
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